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Zakładka z wyszukiwarką danych komponentów |
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Zakładka z wyszukiwarką danych komponentów |
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2SA1225-252 Arkusz danych(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2SA1225-252 Arkusz danych(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 3 page  Silicon PNP Power Transistor 2SA1225 www.iscsemi.com 1 DESCRIPTION · Collector-Emitter Breakdown Voltage- : V(BR)CEO= -160V(Min) · DC Current Gain- : hFE= 70(Min)@ IC= -0.1A · High transition frequency · Complementary to 2SC2983 APPLICATIONS · Power amplifier applications · Driver stage amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -160 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -1.5 A PC Total Power Dissipation @ TC=25℃ 1 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ |
Podobny numer części - 2SA1225-252 |
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Podobny opis - 2SA1225-252 |
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