| Zakładka z wyszukiwarką danych komponentów |
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2SA1552 Arkusz danych(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SA1552 Arkusz danych(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page ![]() Silicon PNP Power Transistor 2SA1552 www.iscsemi.com 2 ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified) SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCE(sat) Collector-Emitter Saturation Voltage IC= -0.5A; IB= -50mA -- -- -0.5 V VBE(sat) Base-Emitter Saturation Voltage IC= -0.5A; IB= -50mA -- -- -1.2 V V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10uA; IB= 0 -180 -- -- V V(BR)EBO Emitter-Base Breakdown Voltage IE= -10uA; IC= 0 -6 -- -- V ICBO Collector Cutoff Current VCB= -120V; IE= 0 -- -- -1.0 μ A IEBO Emitter Cutoff Current VEB= -4V; IC= 0 -- -- -1.0 μ A hFE-1 DC Current Gain IC= -0.1A; VCE= -5V 100 -- 400 hFE-2 DC Current Gain IC= -10mA; VCE= -5V 80 -- -- COB Output Capacitance IE= 0; VCB= -10V; f= 1.0MHz -- 22 -- pF fT Current-Gain—Bandwidth Product IC= -50mA; VCE= -10V -- 120 -- MHz hFE Classifications R S T 100-200 140-280 200-400 |
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