MJD122 datasheet(1/2 Pages) ISC

Numer części	MJD122

Szczegółowy opis	Silicon NPN Power Transistor

PDF	2 Pages

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Producent	ISC [Inchange Semiconductor Company Limited]

Strona internetowa	http://www.iscsemi.cn

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Silicon NPN Power Transistor

MJD122

www.iscsemi.com

1

DESCRIPTION

·

High DC current gain

·

Lead formed for surface mount applications

·

Built-in a damper diode at E-C

·

Complementary Pairs Simplifies Designs

APPLICATIONS

·

Designed for general purpose amplifier

and low speed switching applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

100

V

VCEO

Collector-Emitter Voltage

100

V

VEBO

Emitter-Base Voltage

5

V

IC

Collector Current-Continuous

5

A

ICm

Collector Current-Peak

8

A

IB

Base Current-Continuous

120

mA

PC

Collector Power Dissipation

Ta=25℃

20

W

Collector Power Dissipation

TC=25℃

0.16

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature Range

-65~150

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance,Junction to Case

6.25

℃

/W

Podobny numer części - MJD122

Producent	Numer części	Arkusz danych	Szczegółowy opis
Motorola, Inc	MJD122	284Kb / 8P	SILICON POWER TRANSISTORS 8 AMPERES 100 VOLTS 20 WATT
ON Semiconductor	MJD122	284Kb / 8P	Complementary Darlington Power Transistors 1995 REV 1
STMicroelectronics	MJD122	81Kb / 6P	COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS Jan-1999
Fairchild Semiconductor	MJD122	137Kb / 8P	Complementary Darlington Power Transistors
ON Semiconductor	MJD122	87Kb / 7P	Complementary Darlington Power Transistor December, 2005 ??Rev. 7

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