PHP3N60E datasheet(3/9 Pages) PHILIPS

3 / 9 page

Philips Semiconductors

Product specification

PowerMOS transistors

PHP3N60E, PHB3N60E

Avalanche energy rated

ELECTRICAL CHARACTERISTICS

j = 25 ˚C unless otherwise specified

SYMBOL PARAMETER

CONDITIONS

MIN.

TYP. MAX. UNIT

(BR)DSS

Drain-source breakdown

GS = 0 V; ID = 0.25 mA

600

voltage

∆V

(BR)DSS / Drain-source breakdown

DS = VGS; ID = 0.25 mA

0.1

%/K

∆T

voltage temperature

coefficient

DS(ON)

Drain-source on resistance

GS = 10 V; ID = 1.4 A

4.4

Ω

GS(TO)

Gate threshold voltage

DS = VGS; ID = 0.25 mA

2.0

3.0

4.0

Forward transconductance

DS = 30 V; ID = 1.4 A

0.7

1.7

DSS

Drain-source leakage current V

DS = 600 V; VGS = 0 V

100

µA

DS = 480 V; VGS = 0 V; Tj = 125 ˚C

500

µA

GSS

Gate-source leakage current V

GS = ±30 V; VDS = 0 V

200

g(tot)

Total gate charge

D = 2.8 A; VDD = 480 V; VGS = 10 V

Gate-source charge

Gate-drain (Miller) charge

d(on)

Turn-on delay time

DD = 300 V; RD = 100 Ω;

Turn-on rise time

G = 18 Ω

-26

d(off)

Turn-off delay time

Turn-off fall time

Internal drain inductance

Measured from tab to centre of die

3.5

Internal drain inductance

Measured from drain lead to centre of die

4.5

(SOT78 package only)

Internal source inductance

Measured from source lead to source

7.5

bond pad

iss

Input capacitance

GS = 0 V; VDS = 25 V; f = 1 MHz

300

oss

Output capacitance

rss

Feedback capacitance

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

j = 25 ˚C unless otherwise specified

SYMBOL PARAMETER

CONDITIONS

MIN.

TYP. MAX. UNIT

Continuous source current

mb = 25˚C

2.8

(body diode)

Pulsed source current (body

mb = 25˚C

diode)

Diode forward voltage

S = 2.8 A; VGS = 0 V

1.2

Reverse recovery time

S = 2.8 A; VGS = 0 V; dI/dt = 100 A/µs

500

Reverse recovery charge

µC

December 1998

Rev 1.200

PHP3N60E Arkusz danych(PDF) 3 Page - NXP Semiconductors

PHP3N60E Arkusz danych(HTML) 3 Page - NXP Semiconductors

Html Pages

1 2 3 4 5 6 7 8 9

Arkusz danych Pobierz

Link URL