2SC5823-252 datasheet(1/2 Pages) ISC

Numer części	2SC5823-252

Szczegółowy opis	Silicon NPN Power Transistor

PDF	2 Pages

Scroll/Zoom	100%

Producent	ISC [Inchange Semiconductor Company Limited]

Strona internetowa	http://www.iscsemi.cn

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Silicon NPN Power Transistor

2SC5823

www.iscsemi.com

1

DESCRIPTION

·

Collector-Emitter Breakdown Voltage-

: V(BR)CEO= 400V(Min)

·

DC Current Gain-

: hFE= 20(Min)@ IC= 0.1A

APPLICATIONS

·

DC-DC converter,relay drivers,lamp drivers,motor

drivers, inverter

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

700

V

VCEO

Collector-Emitter Voltage

400

V

VEBO

Emitter-Base Voltage

8

V

IC

Collector Current-Continuous

1.5

A

ICM

Collector Current-Peak

3

A

PC

Collector Power Dissipation

1

W

Collector Power Dissipation

@TC= 25℃

10

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature Range

-55~150

℃

Podobny numer części - 2SC5823-252

Producent	Numer części	Arkusz danych	Szczegółowy opis
Inchange Semiconductor ...	2SC5823-251	295Kb / 2P	Silicon NPN Power Transistor

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