PHT6NQ10T datasheet(4/7 Pages) PHILIPS

4 / 7 page

Philips Semiconductors

Product specification

N-channel TrenchMOS

™ transistor

PHT6NQ10T

Fig.7. Typical transfer characteristics.

D = f(VGS)

Fig.8. Typical transconductance, T

j = 25 ˚C.

fs = f(ID)

Fig.9. Normalised drain-source on-state resistance.

DS(ON)/RDS(ON)25 ˚C = f(Tj)

Fig.10. Gate threshold voltage.

GS(TO) = f(Tj); conditions: ID = 1 mA; VDS = VGS

Fig.11. Sub-threshold drain current.

D = f(VGS); conditions: Tj = 25 ˚C; VDS = VGS

Fig.12. Typical capacitances, C

iss, Coss, Crss.

C = f(V

DS); conditions: VGS = 0 V; f = 1 MHz

234

Gate-source voltage, VGS (V)

Drain current, ID (A)

VDS > ID X RDS(ON)

Tj = 25 C

150 C

Threshold Voltage, VGS(TO) (V)

0.5

1.5

2.5

3.5

4.5

-60

-40

-20

100 120 140 160 180

Junction Temperature, Tj (C)

typical

maximum

minimum

0123456

Drain current, ID (A)

Transconductance, gfs (S)

Tj = 25 C

150 C

VDS > ID X RDS(ON)

Drain current, ID (A)

1.0E-06

1.0E-05

1.0E-04

1.0E-03

1.0E-02

1.0E-01

0.5

1.5

2.5

3.5

4.5

Gate-source voltage, VGS (V)

minimum

typical

maximum

Normalised On-state Resistance

0.5

0.7

0.9

1.1

1.3

1.5

1.7

1.9

2.1

2.3

2.5

2.7

2.9

-60

-40

-20

100 120 140 160 180

Junction temperature, Tj (C)

100

1000

10000

0.1

100

Drain-Source Voltage, VDS (V)

Capacitances, Ciss, Coss, Crss (pF)

Ciss

Coss

Crss

August 1999

Rev 1.000

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