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PHT8N06LT Arkusz danych(PDF) 2 Page - NXP Semiconductors |
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PHT8N06LT Arkusz danych(HTML) 2 Page - NXP Semiconductors |
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2 / 9 page  Philips Semiconductors Product specification TrenchMOS ™ transistor PHT8N06LT Logic level FET THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT R th j-sp From junction to solder point Mounted on any PCB 12 15 K/W R th j-amb From junction to ambient Mounted on PCB of Fig.17 - 70 K/W STATIC CHARACTERISTICS T j= 25˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V (BR)DSS Drain-source breakdown V GS = 0 V; ID = 0.25 mA 55 - - V voltage T j = -55˚C 50 - - V V GS(TO) Gate threshold voltage V DS = VGS; ID = 1 mA 1.0 1.5 2.0 V T j = 150˚C 0.6 - - V T j = -55˚C - - 2.3 V I DSS Zero gate voltage drain current V DS = 55 V; VGS = 0 V; - 0.05 10 µA T j = 150˚C - - 100 µA I GSS Gate source leakage current V GS = ±5 V - 0.02 1 µA T j = 150˚C - - 5 µA ±V (BR)GSS Gate source breakdown voltage I G = ±1 mA 10 - - V R DS(ON) Drain-source on-state V GS = 5 V; ID = 5 A - 65 80 m Ω resistance T j = 150˚C - - 148 m Ω DYNAMIC CHARACTERISTICS T mb = 25˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT g fs Forward transconductance V DS = 25 V; ID = 5 A; Tj = 25˚C 4 - - S Q g(tot) Total gate charge I D = 7 A; VDD = 44 V; VGS = 5 V - 11.2 - nC Q gs Gate-source charge - 2.2 - nC Q gd Gate-drain (Miller) charge - 5 - nC C iss Input capacitance V GS = 0 V; VDS = 25 V; f = 1 MHz - 500 650 pF C oss Output capacitance - 110 135 pF C rss Feedback capacitance - 60 85 pF t d on Turn-on delay time V DD = 30 V; ID = 7 A; - 10 15 ns t r Turn-on rise time V GS = 5 V; RG = 10 Ω; - 30 50 ns t d off Turn-off delay time - 30 45 ns t f Turn-off fall time T j = 25˚C - 30 40 ns REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS T j = -55 to 175˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT I DR Continuous reverse drain T sp = 25˚C - - 7.5 A current I DRM Pulsed reverse drain current T sp = 25˚C - - 40 A V SD Diode forward voltage I F = 5 A; VGS = 0 V - 0.85 1.1 V t rr Reverse recovery time I F = 5 A; -dIF/dt = 100 A/µs; - 38 - ns Q rr Reverse recovery charge V GS = -10 V; VR = 30 V - 0.2 - µC January 1998 2 Rev 1.100 |
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