1997 Feb 18

3

Philips Semiconductors

Product specification

NPN microwave power transistor

PLB16012U

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

Note

1. Up to 0.3 mm from ceramic.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

collector-base voltage

open emitter

−

45

V

collector-emitter voltage

open base

−

15

V

collector-emitter voltage

40

V

emitter-base voltage

open collector

−

3V

collector current (DC)

−

0.9

A

total power dissipation

−

15

W

storage temperature

−65

+150

°C

operating junction temperature

−

200

°C

soldering temperature

t

≤ 10 s; note 1

−

235

°C

Fig.2

Maximum power dissipation derating as a

function of mounting base temperature.

handbook, halfpage

−50

50

Ptot

(W)

150

Tmb (

250

20

15

5

0

10

MGA242

0

100

200

Fig.3 Load power as a function of source power.

handbook, halfpage

0

15

10

5

0

0.5

PL

(W)

1.0

2.0

MGA241

1.5

PIN (W)