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2SC3356-R23 Arkusz danych(PDF) 3 Page - EVER SEMICONDUCTOR CO.,LIMITED

Numer części 2SC3356-R23
Szczegółowy opis  NPN Transistors
PDF  4 Pages
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Producent  EVVOSEMI [EVER SEMICONDUCTOR CO.,LIMITED]
Strona internetowa  https://www.evvosemi.com
Logo EVVOSEMI - EVER SEMICONDUCTOR CO.,LIMITED

2SC3356-R23 Arkusz danych(HTML) 3 Page - EVER SEMICONDUCTOR CO.,LIMITED

  2SC3356-R23 Datasheet HTML 1Page - EVER SEMICONDUCTOR CO.,LIMITED 2SC3356-R23 Datasheet HTML 2Page - EVER SEMICONDUCTOR CO.,LIMITED 2SC3356-R23 Datasheet HTML 3Page - EVER SEMICONDUCTOR CO.,LIMITED 2SC3356-R23 Datasheet HTML 4Page - EVER SEMICONDUCTOR CO.,LIMITED  
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Typical Characterisitics
0
2
1
5
4
3
7
6
0.5
1
5
10
50 70
IC-Collector Current-mA
NOISE FIGURE vs.
COLLECTOR CURRENT
VCE = 10 V
f = 1.0 GHz
5
4
3
2
1
0
18
15
12
6
3
0
2
4
6
8
10
VCE-Collector to Emitter Voltage-V
NOISE FIGURE, FORWARD INSERTION
GAIN vs. COLLECTOR TO EMITTER VOLTAGE
f = 1.0 GHz
IC = 20 mA
|S21e|2
NF
50
00
60
70
80
90
100
110
120
130
0.32
0.18
0.34
0.16
0.36
0.14
0.38
0.12
0.40
0.10
0.42
0.08
0.17
0.15
0.13
0.11
0.09
0.07
0.33
0.35
0.37
0.39
0.41
0.43
50
10
6.0
4.0
3.0
0.2
0.4
0.6
0.8
1.0
0.3
0.2
0.1
0.2
0.8
0.6
0.4
0.4
REACTANCE COMPONENT
( R––––
ZO
)
EN
T
20
S11e, S22e-FREQUENCY
S21e-FREQUENCY
90°
0°
30°
−
30°
60°
−
60°
180°
150°
−
150°
120°
−
120°
−
90°
5
10
15
20
S21e
0.2 GHz
2.0 GHz
90°
0°
30°
−
30°
60°
−
60°
180°
150°
−
150°
120°
−
120°
−
90°
0.05 0.1
0.15 0.2 0.25
S12e
0.2 GHz
2.0 GHz
S12e-FREQUENCY
VCE = 10 V
200 MHz Step
CONDITION
VCE = 10 V
IC = 20 mA
CONDITION
VCE = 10 V
IC = 20 mA
CONDITION
0.2 GHz
0.2 GHz
0.2 GHz
2.0 GHz
IC = 20 mA
S22e
S11e
IC = 20 mA
IC = 5 mA
IC = 5 mA
2SC3356
3
Rev:2022A2



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