PMLL4151 datasheet(5/9 Pages) PHILIPS

5 / 9 page

1996 Sep 18

Philips Semiconductors

Product speciﬁcation

High-speed diodes

PMLL4150; PMLL4151; PMLL4153

THERMAL CHARACTERISTICS

Note

1. Device mounted on an FR4 printed-circuit board.

trr

reverse recovery time

when switched from IF = 10 mA to

IR = 1 mA; RL = 100 Ω; measured at

IR = 0.1 mA; see Fig.7

PMLL4150

−

6ns

when switched from IF = 10 mA to

200 mA to IR = 10 mA to 200 mA;

RL = 100 Ω; measured at IR = 0.1 × IF;

see Fig.7

−

4ns

when switched from IF = 200 mA to

400 mA to IR = 200 mA to 400 mA;

RL = 100 Ω; measured at IR = 0.1 × IF;

see Fig.7

−

6ns

trr

reverse recovery time

when switched from IF = 10 mA to

IR = 10 mA; RL = 100 Ω; measured at

IR = 1 mA; see Fig.7

PMLL4151

−

4ns

when switched from IF = 10 mA to

IR = 60 mA; RL = 100 Ω; measured at

IR = 1 mA; see Fig.7

−

2ns

trr

reverse recovery time

when switched from IF = 10 mA to

IR = 10 mA; RL = 100 Ω; measured at

IR = 1 mA; see Fig.7

PMLL4153

−

4ns

when switched from IF = 10 mA to

IR = 60 mA; RL = 100 Ω; measured at

IR = 1 mA; see Fig.7

−

2ns

tfr

forward recovery time

when switched to IF = 200 mA; tr = 0.4 ns;

measured at VF = 1 V; see Fig.8

−

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-tp

thermal resistance from junction to tie-point

300

K/W

Rth j-a

thermal resistance from junction to ambient

note 1

350

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

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