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FDN304P Arkusz danych(PDF) 3 Page - EVER SEMICONDUCTOR CO.,LIMITED

Numer części FDN304P
Szczegółowy opis  P-Channel MOSFET
PDF  5 Pages
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Producent  EVVOSEMI [EVER SEMICONDUCTOR CO.,LIMITED]
Strona internetowa  https://www.evvosemi.com
Logo EVVOSEMI - EVER SEMICONDUCTOR CO.,LIMITED

FDN304P Arkusz danych(HTML) 3 Page - EVER SEMICONDUCTOR CO.,LIMITED

  FDN304P Datasheet HTML 1Page - EVER SEMICONDUCTOR CO.,LIMITED FDN304P Datasheet HTML 2Page - EVER SEMICONDUCTOR CO.,LIMITED FDN304P Datasheet HTML 3Page - EVER SEMICONDUCTOR CO.,LIMITED FDN304P Datasheet HTML 4Page - EVER SEMICONDUCTOR CO.,LIMITED FDN304P Datasheet HTML 5Page - EVER SEMICONDUCTOR CO.,LIMITED  
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Typical Characteristics
0
3
6
9
12
15
00.511.522.5
-VDS, DRAIN-SOURCE VOLTAGE (V)
-1.8V
-2.0V
-2.5V
-1.5V
VGS = -4.5V
-3.0V
0.5
1
1.5
2
2.5
3
3.5
4
036
9
12
15
-ID, DRAIN CURRENT (A)
VGS = -1.5V
-2.0V
-2.5V
-4.5V
-3.0V
-1.8V
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.7
0.8
0.9
1
1.1
1.2
1.3
1.4
1.5
-50
-25
0
25
50
75
100
125
150
TJ, JUNCTION TEMPERATURE (
oC)
ID = -2.4A
VGS = -4.5V
0.02
0.04
0.06
0.08
0.1
0.12
0.14
12
34
5
-VGS, GATE TO SOURCE VOLTAGE (V)
ID = -1.2 A
TA = 125
oC
TA = 25
oC
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
0
3
6
9
12
15
0
0.5
1
1.5
2
2.5
3
-VGS, GATE TO SOURCE VOLTAGE (V)
TA =
25
oC
VDS = - 5V
-55
oC
0.0001
0.001
0.01
0.1
1
10
100
0
0.2
0.4
0.6
0.8
1
1.2
1.4
-VSD, BODY DIODE FORWARD VOLTAGE (V)
TA = 125
oC
25
oC
-55
oC
VGS = 0V
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
3
FDN304P
Rev:2022A2



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