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IRG4PC30KPBF Arkusz danych(PDF) 1 Page - International Rectifier |
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IRG4PC30KPBF Arkusz danych(HTML) 1 Page - International Rectifier |
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1 / 8 page  12/30/03 VCES = 600V VCE(on) typ. = 2.21V @VGE = 15V, IC = 16A Absolute Maximum Ratings Parameter Max. Units VCES Collector-to-Emitter Voltage 600 V IC @ TC = 25°C Continuous Collector Current 28 IC @ TC = 100°C Continuous Collector Current 16 A ICM Pulsed Collector Current 58 ILM Clamped Inductive Load Current 58 tsc Short Circuit Withstand Time 10 µs VGE Gate-to-Emitter Voltage ±20 V EARV Reverse Voltage Avalanche Energy 260 mJ PD @ TC = 25°C Maximum Power Dissipation 100 W PD @ TC = 100°C Maximum Power Dissipation 42 TJ Operating Junction and-55 to +150 TSTG Storage Temperature Range °C Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) Mounting torque, 6-32 or M3 screw. 10 lbfin (1.1Nm) IRG4PC30KPbF Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR PD - 94921 Parameter Typ. Max. Units RθJC Junction-to-Case 1.2 RθCS Case-to-Sink, Flat, Greased Surface 0.24 °C/W RθJA Junction-to-Ambient, typical socket mount 40 Wt Weight 6 (0.21) g (oz) Thermal Resistance TO-247AC E C G n-channel Features High short circuit rating optimized for motor control, tsc =10µs, @360V VCE (start), TJ = 125°C, VGE = 15V Combines low conduction losses with high switching speed Latest generation design provides tighter parameter distribution and higher efficiency than previous generations As a Freewheeling Diode we recommend our HEXFREDTM ultrafast, ultrasoft recovery diodes for minimum EMI / Noise and switching losses in the Diode and IGBT Latest generation 4 IGBTs offer highest power density motor controls possible This part replaces the IRGPC30K and IRGPC30M devices Benefits www.irf.com 1 Lead-Free |
Podobny numer części - IRG4PC30KPBF |
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Podobny opis - IRG4PC30KPBF |
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