SFF20P10J datasheet(2/2 Pages) SSDI

2 / 2 page

Solid State Devices, Inc.

14830 Valley View Blvd * La Mirada, Ca 90638

Phone: (562) 404-7855 * Fax: (562) 404-1773

ssdi@ssdi-power.com * www.ssdi-power.com

SFF20P10J

Electrical Characteristics

Symbol

Min

Typ

Max

Units

Drain to Source Breakdown Voltage

VGS = 0V, ID = 1 mA

BVDSS

-100

––

Drain to Source On State Resistance

VGS = 10V, ID = 11A, Tj= 25

VGS = 10V, ID = 20A, Tj= 25

RDS(on)

––

140

150

200

230

Ω

Gate Threshold Voltage

VDS = VGS, ID = 250µA

VGS(th)

-2.0

––

-4.0

Gate to Source Leakage

VGS = ±20V

IGSS

––

±100

Zero Gate Voltage Drain Current

VDS = -80V, VGS = 0V, Tj = 25

VDS = -80V, VGS = 0V, Tj = 125

IDSS

––

0.01

0.75

250

µA

Forward Transconductance

VDS = 10V min, ID = 11A, Tj = 25

gfs

––

Mho

Total Gate Charge

Gate to Source Charge

Gate to Drain Charge

VGS = 10V

VDS = 50V

ID = 18A

Qgs

Qgd

––

Turn on Delay Time

Rise Time

Turn off Delay Time

Fall Time

VGS = 10V

VDS = 50V

ID = 18A

RG = 9.1Ω

td(on)

td(off)

––

nsec

Diode Forward Voltage

IF = 20A, VGS = 0V

VSD

––

1.90

4.20

Diode Reverse Recovery Time

Peak Reverse Recovery Current

Reverse Recovery Charge

IF = 20A, di/dt = 100A/usec

trr

Qrr

––

270

350

3.6

nsec

µC

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

VGS = 0V

VDS = 25V

f = 1 MHz

Ciss

Coss

Crss

––

1400

600

180

1650

740

260

NOTES:

* Pulse Test: Pulse Width = 300µsec, Duty Cycle = 2%.

4/ Unless Otherwise Specified, All Electrical Characteristics @25

oC.

NOTE: All specifications are subject to change without notification.

SCD's for these devices should be reviewed by SSDI prior to release.

DATA SHEET #: FT0012A

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