SA7016 datasheet(4/18 Pages) PHILIPS

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Philips Semiconductors

Product specification

SA7016

1.3GHz low voltage fractional-N synthesizer

1999 Nov 04

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL

PARAMETER

MIN.

MAX.

UNIT

VDD

Digital supply voltage

–0.3

+5.5

VDDCP

Analog supply voltage

–0.3

+5.5

∆VDDCP–VDD

Difference in voltage between VDDCP and VDD (VDDCP ≥ VDD)

–0.3

+2.8

Voltage at pins 1, 2, 5, 6, 11 to 16

–0.3

VDD + 0.3

Voltage at pin 8, 9

–0.3

VDDCP+ 0.3

∆VGND

Difference in voltage between GNDCP and GND (these pins should

be connected together)

–0.3

+0.3

Tstg

Storage temperature

–55

+125

Tamb

Operating ambient temperature

–40

+85

Maximum junction temperature

150

Handling

Inputs and outputs are protected against electrostatic discharge in

normal handling. However, to be totally safe, it is desirable to take

normal precautions appropriate to handling MOS devices.

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

VALUE

UNIT

Rth j–a

Thermal resistance from junction to ambient in free air

120

K/W

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