2-1
Product Description
Ordering Information
Typical Applications
Features
Functional Block Diagram
RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Optimum Technology Matching® Applied
Si BJT
GaAs MESFET
GaAs HBT
Si Bi-CMOS
SiGe HBT
Si CMOS
InGaP/HBT
GaN HEMT
SiGe Bi-CMOS
RF IN
RF OUT
VMODE
GND
VREG
VCC2
VCC2
VCC2
16
15
14
13
1
2
3
4
8
7
6
5
9
10
11
12
Bias
IMN
OMN
Interstage MN
Q1
Q2
Integrated
Power
Detector
RF5198
3V 1950MHZ W-CDMA LINEAR POWER
AMPLIFIER MODULE
• 3V W-CDMA Band 1 Handsets
• Multi-Mode W-CDMA 3G Handsets
• 3V TD-SCDMA Handsets
• Spread-Spectrum Systems
The RF5198 is a high-power, high-efficiency linear ampli-
fier module specifically designed for 3V handheld sys-
tems. The device is manufactured on an advanced third
generation GaAs HBT process, and was designed for use
as the final RF amplifier in 3V W-CDMA handheld digital
cellular equipment, spread-spectrum systems, and other
applications in the 1920MHz to 1980MHz band (Band 1).
The RF5198 has a digital control pin for low power appli-
cations to lower quiescent current. This PA also includes
a power detector circuit. The RF5198 is assembled in at
16-pin, 3mmx3mm, QFN package.
• Input/Output Internally Matched@50
Ω
• 27.5dBm Linear Output Power
• 42% Peak Linear Efficiency
• -41dBc ACLR @ ±5MHz
• Integrated Power Detector
• HSDPA Capable
RF5198
3V 1950MHz W-CDMA Linear Power Amplifier Mod-
ule
RF5198PCBA-41XFully Assembled Evaluation Board
0
Rev A5 060310
B
3.00
A
3.00
Pin 1 ID
2 PLCS
0.15 C
2 PLCS
0.15 C
0.203 REF
0.102 REF
0.08 C
C
0.08 C
0.925
0.775
1.45
0.05
0.28
0.18
TYP
Pin 1 ID
0.50 TYP
0.40
0.20
TYP
0.10
C AB
M
1.45
Shaded areas represent pin 1.
Dimensions in mm.
Package Style: QFN, 16-Pin, 3x3
RoHS Compliant & Pb-Free Product
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