Solid State Devices, Inc.

14701 Firestone Blvd * La Mirada, Ca 90638

Phone: (562) 404-4474 * Fax: (562) 404-1773

ssdi@ssdi-power.com * www.ssdi-power.com

Designer’s Data Sheet

SDR1

__ __ __

__ = Not Screened

TX = TX Level

TXV = TXV

S = S Level

│

│

│

│

│

│

SMS = Surface Mount Square Tab

│

│

│

│

│

│

│

│

│

└

-R = 1400 V

-S = 1500 V

-T = 1600 V

-V = 1700 V

-W = 1800 V

SDR1P thru SDR1W

and

SDR1PSMS and SDR1WSMS

1 AMP

1300 ─ 1900 VOLTS

70 nsec ULTRA FAST RECTIFIER

FEATURES:

•

Ultra Fast Recovery: 70 ns Max @ 25

•

Single Chip Construction

•

PIV to 1800 Volts

•

Low Reverse Leakage Current

•

Hermetically Sealed

•

For High Efficiency Applications

•

Available in Axial and Surface Mount Versions

•

Metallurgically Bonded

•

TX, TXV, and S-Level Screening Available

RATING

SYMBOL

VALUE

UNIT

Peak Repetitive Reverse

Voltage

And

DC Blocking Voltage

SDR1P and SDR1PSMS

SDR1R and SDR1RSMS

SDR1S and SDR1SSMS

SDR1T and SDR1TSMS

SDR1V and SDR1VSMS

SDR1W and SDR1WSMS

1300

1400

1500

1600

1700

1800

Volts

Rectified Forward Forward Current

1.0

Amp

Peak Surge Current

(8.3 msec Pulse, Half Sine Wave Superimposed on Io, allow junction to reach

20

Amps

Operating & Storage Temperature

-65 to +175

°C

Thermal Resistance, Junction to Lead, L = 3/8” (Axial)

Junction to End Tab (SMS)

35

28

°C/W

Axial Lead

SMS

NOTES:

1/ For Ordering Information, Price, and Availability- Contact Factory.

2/ Screened to MIL-PRF-19500.

3/ Unless Otherwise Specified, All Electrical Characteristics @25ºC.

NOTE: All specifications are subject to change without notification.

SCD's for these devices should be reviewed by SSDI prior to release.

DATA SHEET #: RU0001D

DOC