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APT31M100B2 Arkusz danych(PDF) 4 Page - Microsemi Corporation

Numer części APT31M100B2
Szczegółowy opis  N-Channel MOSFET
PDF  4 Pages
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Producent  MICROSEMI [Microsemi Corporation]
Strona internetowa  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

APT31M100B2 Arkusz danych(HTML) 4 Page - Microsemi Corporation

  APT31M100B2 Datasheet HTML 1Page - Microsemi Corporation APT31M100B2 Datasheet HTML 2Page - Microsemi Corporation APT31M100B2 Datasheet HTML 3Page - Microsemi Corporation APT31M100B2 Datasheet HTML 4Page - Microsemi Corporation  
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Microsemi's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786
5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
TO-264 (L) Package Outline
T-MAX™ (B2) Package Outline
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
4.50 (.177) Max.
19.81 (.780)
20.32 (.800)
20.80 (.819)
21.46 (.845)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
5.45 (.215) BSC
2.87 (.113)
3.12 (.123)
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
2.21 (.087)
2.59 (.102)
0.40 (.016)
0.79 (.031)
Drain
Source
Gate
These dimensions are equal to the TO-247 without the mounting hole.
2-Plcs.
19.51 (.768)
20.50 (.807)
19.81 (.780)
21.39 (.842)
25.48 (1.003)
26.49 (1.043)
2.29 (.090)
2.69 (.106)
0.76 (.030)
1.30 (.051)
3.10 (.122)
3.48 (.137)
4.60 (.181)
5.21 (.205)
1.80 (.071)
2.01 (.079)
2.59 (.102)
3.00 (.118)
0.48 (.019)
0.84 (.033)
Drain
Source
Gate
Dimensions in Millimeters and (Inches)
2.29 (.090)
2.69 (.106)
5.79 (.228)
6.20 (.244)
2.79 (.110)
3.18 (.125)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
e3 100% Sn Plated
0.0140
0.0496
0.0571
0.0108
0.0266
0.375
Dissipated Power
(Watts)
TJ (°C)
TC (°C)
Z
EXT are the external thermal
impedances: Case to sink,
sink to ambient, etc. Set to
zero when modeling only
the case to junction.
1ms
100ms
Rds(on)
0.5
SINGLE PULSE
0.1
0.3
0.7
0.05
D = 0.9
Scaling for Different Case & Junction
Temperatures:
I
D = ID(TC = 25°C)
*(T
J - TC)/125
Peak TJ = PDM x ZθJC + TC
Duty Factor D =
t1/t2
t2
t1
Note:
t1 = Pulse Duration
DC line
100µs
I
DM
10ms
13µs
100µs
I
DM
100ms
10ms
13µs
Rds(on)
DC line
T
J = 150°C
T
C = 25°C
1ms
V
DS, DRAIN-TO-SOURCE VOLTAGE (V)
V
DS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 9, Forward Safe Operating Area
Figure 10, Maximum Forward Safe Operating Area
10-5
10-4
10-3
10-2
10-1
1.0
RECTANGULAR PULSE DURATION (seconds)
Figure 12. Maximum Effective Transient Thermal Impedance Junction-to-Case vs Pulse Duration
Figure 11, Transient Thermal Impedance Model
1
10
100
1200
1
10
100
1200
200
100
10
1
0.1
0.14
0.12
0.10
0.08
0.06
0.04
0.02
0
200
100
10
1
0.1
APT31M100B2_L
T
J = 125°C
T
C = 75°C



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