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IXTH76P10T Arkusz danych(PDF) 1 Page - Inchange Semiconductor Company Limited

Numer części IXTH76P10T
Szczegółowy opis  Trench P-Channel MOSFET
PDF  2 Pages
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Producent  ISC [Inchange Semiconductor Company Limited]
Strona internetowa  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

IXTH76P10T Arkusz danych(HTML) 1 Page - Inchange Semiconductor Company Limited

  IXTH76P10T Datasheet HTML 1Page - Inchange Semiconductor Company Limited IXTH76P10T Datasheet HTML 2Page - Inchange Semiconductor Company Limited  
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ISF1235
eq IXTH76P10T
Trench P-Channel MOSFET
www.iscsemi.com
1
FEATURES
· Drain Current -ID= -76A@ TC=25℃
· Drain Source Voltage -VDSS= -100V(Min)
· Static Drain-Source On-Resistance
-RDS(on) = 25mΩ(Max)@VGS= -10V
APPLICATIONS
· High-Side Switching
· Battery Charger Applications
· DC Choppers
· Automatic Test Equipment
· Current Regulators
ABSOLUTE MAXIMUM RATINGS
(TC=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
-100
V
VGS
Gate-Source Voltage-Continuous
±
15
V
ID
Drain Current-Continuous
-76
A
IDM
Drain Current-Single Pulse
-230
A
PD
Total Dissipation @TC=25℃
298
W
TJ
Max. Operating Junction Temperature
150
℃
Tstg
Storage Temperature
-55~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance, Junction to Case
0.42
℃
/W


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