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APT5010JLLU2 Arkusz danych(PDF) 2 Page - Microsemi Corporation

Numer części APT5010JLLU2
Szczegółowy opis  ISOTOP Boost chopper MOSFET Power Module
PDF  7 Pages
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Producent  MICROSEMI [Microsemi Corporation]
Strona internetowa  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

APT5010JLLU2 Arkusz danych(HTML) 2 Page - Microsemi Corporation

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APT5010JLLU2
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All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
VGS = 0V,VDS = 500V
Tj = 25°C
100
IDSS
Zero Gate Voltage Drain Current
VGS = 0V,VDS = 400V
Tj = 125°C
500
µA
RDS(on)
Drain – Source on Resistance
VGS = 10V, ID = 23A
100
m
Ω
VGS(th)
Gate Threshold Voltage
VGS = VDS, ID = 2.5mA
3
5
V
IGSS
Gate – Source Leakage Current
VGS = ±20 V, VDS = 0V
±100
nA
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
Ciss
Input Capacitance
4360
Coss
Output Capacitance
894
Crss
Reverse Transfer Capacitance
VGS = 0V
VDS = 25V
f = 1MHz
60
pF
Qg
Total gate Charge
96
Qgs
Gate – Source Charge
24
Qgd
Gate – Drain Charge
VGS = 10V
VBus = 250V
ID = 41A @ TJ=25°C
49
nC
Td(on)
Turn-on Delay Time
11
Tr
Rise Time
15
Td(off)
Turn-off Delay Time
25
Tf
Fall Time
Resistive switching @ 25°C
VGS = 15V
VBus = 250V
ID = 41A @ TJ=25°C
RG = 0.6Ω
3
ns
Eon
Turn-on Switching Energy
543
Eoff
Turn-off Switching Energy
Inductive Switching @ 25°C
Vbus = 330V, VGS=15V
ID=46A, RG=5Ω
509
µJ
Eon
Turn-on Switching Energy
843
Eoff
Turn-off Switching Energy
Inductive Switching @ 125°C
Vbus = 330V, VGS=15V
ID=46A, RG=5Ω
593
µJ
Chopper diode ratings and characteristics
Symbol
Characteristic
Test Conditions
Min
Typ
Max
Unit
IF = 30A
1.6
1.8
IF = 60A
1.9
VF
Diode Forward Voltage
IF = 30A
Tj = 125°C
1.4
V
VR = 600V
Tj = 25°C
250
IRM
Maximum Reverse Leakage Current
VR = 600V
Tj = 125°C
500
µA
CT
Junction Capacitance
VR = 200V
44
pF
Reverse Recovery Time
IF=1A,VR=30V
di/dt =100A/µs
Tj = 25°C
23
Tj = 25°C
85
trr
Reverse Recovery Time
Tj = 125°C
160
ns
Tj = 25°C
4
IRRM
Maximum Reverse Recovery Current
Tj = 125°C
8
A
Tj = 25°C
130
Qrr
Reverse Recovery Charge
IF = 30A
VR = 400V
di/dt =200A/µs
Tj = 125°C
700
nC
trr
Reverse Recovery Time
70
ns
Qrr
Reverse Recovery Charge
1300
nC
IRRM
Maximum Reverse Recovery Current
IF = 30A
VR = 400V
di/dt =1000A/µs
Tj = 125°C
30
A



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