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Zakładka z wyszukiwarką danych komponentów |
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Zakładka z wyszukiwarką danych komponentów |
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IXTX170P10P Arkusz danych(PDF) 1 Page - Inchange Semiconductor Company Limited |
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IXTX170P10P Arkusz danych(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  ISF1242 eq IXTX170P10P isc P-Channel MOSFET Transistor www.iscsemi.com 1 DESCRIPTION · Drain Current -ID= -170A@ TC=25℃ · Drain Source Voltage -VDSS= -100V(Min) · Static Drain-Source On-Resistance -RDS(on) = 14mΩ(Max)@VGS= -10V APPLICATIONS · Push Pull Amplifier · High-Side Switches · DC choppers · Current Regulators ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) -100 V VGSS Gate-Source Voltage ± 20 V ID Drain Current-continuous @ TC=25℃ -170 A IDM Pulse Drain Current -510 A PD Total Dissipation@TC=25℃ 890 W TJ Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 0.14 ℃ /W |
Podobny numer części - IXTX170P10P |
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Podobny opis - IXTX170P10P |
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