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Zakładka z wyszukiwarką danych komponentów |
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APTM120A29FTG Arkusz danych(PDF) 1 Page - Microsemi Corporation |
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APTM120A29FTG Arkusz danych(HTML) 1 Page - Microsemi Corporation |
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1 / 6 page  APTM120A29FTG www.microsemi.com 1 – 6 G1 Q1 VBUS NT C2 OUT S1 G2 S2 Q2 0/VBUS NT C1 S2 G2 NTC2 OUT OUT VBUS NTC1 S1 S2 G2 0/VBUS G1 Absolute maximum ratings These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com Symbol Parameter Max ratings Unit VDSS Drain - Source Breakdown Voltage 1200 V Tc = 25°C 34 ID Continuous Drain Current Tc = 80°C 25 IDM Pulsed Drain current 136 A VGS Gate - Source Voltage ±30 V RDSon Drain - Source ON Resistance 348 m Ω PD Maximum Power Dissipation Tc = 25°C 780 W IAR Avalanche current (repetitive and non repetitive) 22 A EAR Repetitive Avalanche Energy 50 EAS Single Pulse Avalanche Energy 3000 mJ VDSS = 1200V RDSon = 290mΩ typ @ Tj = 25°C ID = 34A @ Tc = 25°C Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features • Power MOS 7® FREDFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode - Avalanche energy rated - Very rugged • Kelvin source for easy drive • Very low stray inductance - Symmetrical design - Lead frames for power connections • Internal thermistor for temperature monitoring • High level of integration Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Low profile • RoHS Compliant Phase Leg MOSFET Power Module |
Podobny numer części - APTM120A29FTG |
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Podobny opis - APTM120A29FTG |
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