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Zakładka z wyszukiwarką danych komponentów |
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Zakładka z wyszukiwarką danych komponentów |
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APTM120H57FT3G Arkusz danych(PDF) 2 Page - Microsemi Corporation |
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APTM120H57FT3G Arkusz danych(HTML) 2 Page - Microsemi Corporation |
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2 / 6 page  APTM120H57FT3G www.microsemi.com 2 – 6 All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit VGS = 0V,VDS = 1200V Tj = 25°C 250 IDSS Zero Gate Voltage Drain Current VGS = 0V,VDS = 1000V Tj = 125°C 1000 µA RDS(on) Drain – Source on Resistance VGS = 10V, ID = 8.5A 570 684 m Ω VGS(th) Gate Threshold Voltage VGS = VDS, ID = 2.5mA 3 5 V IGSS Gate – Source Leakage Current VGS = ±30 V, VDS = 0V ±100 nA Dynamic Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit Ciss Input Capacitance 5155 Coss Output Capacitance 770 Crss Reverse Transfer Capacitance VGS = 0V VDS = 25V f = 1MHz 130 pF Qg Total gate Charge 187 Qgs Gate – Source Charge 24 Qgd Gate – Drain Charge VGS = 10V VBus = 600V ID = 17A 120 nC Td(on) Turn-on Delay Time 20 Tr Rise Time 15 Td(off) Turn-off Delay Time 160 Tf Fall Time Inductive switching @ 125°C VGS = 15V VBus = 800V ID = 17A RG = 5Ω 45 ns Eon Turn-on Switching Energy 990 Eoff Turn-off Switching Energy Inductive switching @ 25°C VGS = 15V, VBus = 800V ID = 17A, RG = 5Ω 685 µJ Eon Turn-on Switching Energy 1565 Eoff Turn-off Switching Energy Inductive switching @ 125°C VGS = 15V, VBus = 800V ID = 17A, RG = 5Ω 857 µJ Source - Drain diode ratings and characteristics Symbol Characteristic Test Conditions Min Typ Max Unit Tc = 25°C 17 IS Continuous Source current (Body diode) Tc = 80°C 13 A VSD Diode Forward Voltage VGS = 0V, IS = - 17A 1.3 V dv/dt Peak Diode Recovery 18 V/ns Tj = 25°C 320 trr Reverse Recovery Time Tj = 125°C 650 ns Tj = 25°C 2 Qrr Reverse Recovery Charge IS = - 17A VR = 600V diS/dt = 100A/µs Tj = 125°C 7 µC dv/dt numbers reflect the limitations of the circuit rather than the device itself. IS ≤ - 17A di/dt ≤ 700A/µs VR ≤ VDSS Tj ≤ 150°C |
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