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Zakładka z wyszukiwarką danych komponentów |
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Zakładka z wyszukiwarką danych komponentów |
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IRF520VPBF Arkusz danych(PDF) 1 Page - International Rectifier |
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IRF520VPBF Arkusz danych(HTML) 1 Page - International Rectifier |
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1 / 8 page  IRF520VPbF HEXFET® Power MOSFET 11/5/03 Parameter Typ. Max. Units RθJC Junction-to-Case ––– 3.4 RθCS Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W RθJA Junction-to-Ambient ––– 62 Thermal Resistance www.irf.com 1 VDSS = 100V RDS(on) = 0.165Ω ID = 9.6A S D G TO-220AB Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Optimized for SMPS Applications Description PD - 94819 Absolute Maximum Ratings Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 9.6 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 6.8 A IDM Pulsed Drain Current 37 PD @TC = 25°C Power Dissipation 44 W Linear Derating Factor 0.29 W/°C VGS Gate-to-Source Voltage ± 20 V IAR Avalanche Current 9.2 A EAR Repetitive Avalanche Energy 4.4 mJ dv/dt Peak Diode Recovery dv/dt 7.0 V/ns TJ Operating Junction and -55 to + 175 TSTG Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case ) °C Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m) Lead-Free |
Podobny numer części - IRF520VPBF |
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Podobny opis - IRF520VPBF |
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