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MDP08N032TH Arkusz danych(PDF) 1 Page - MagnaChip Semiconductor. |
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MDP08N032TH Arkusz danych(HTML) 1 Page - MagnaChip Semiconductor. |
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1 / 7 page ![]() Magnachip Power Technology MDP08N032TH • • • • • • http://www.magnachip.com/powersolutions TO-220 Top View Bottom View Tube Halogen Free Ordering information Type / Ordering Code Package Marking Packing RoHS Status MDP08N032TH TO-220 08N032 Junction temperature, max 175 oC ID 120 A QG 106 nC Key performance parameters VDS 80 V RDS(on), max 0.00323 Ω Magnachip’s MOSFET Technology Specifically for E-Bike applications Applications Very low on-resistance RDS(on) Switching Applications Drives Features and benefits The MDP08N032TH uses advanced Magnachip’s MV MOSFET Technology, which provides high performance in on-state resistance, fast switching performance, and excellent quality. MDP08N032TH is suitable device for Motor Drive applications and general purpose applications. 100% Avalanche / Rg Tested General description MDP08N032TH Single N-channel Trench MOSFET 80V 3.23mΩ 120A D S G G D S Jul. 2021. Rev. 1.2 1 / 7 All information provided in this document is subject to legal disclaimers Product data sheet |
Podobny numer części - MDP08N032TH |
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Podobny opis - MDP08N032TH |
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