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Zakładka z wyszukiwarką danych komponentów |
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Zakładka z wyszukiwarką danych komponentów |
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STGB30H65DFB2 Arkusz danych(PDF) 4 Page - STMicroelectronics |
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STGB30H65DFB2 Arkusz danych(HTML) 4 Page - STMicroelectronics |
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4 / 17 page  Table 5. Switching characteristics (inductive load) Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) Turn-on delay time VCC = 400 V, IC = 30 A, VGE = 15 V, RG = 6.8 Ω (see Figure 27. Test circuit for inductive load switching) - 18.4 - ns tr Current rise time - 5.8 - ns Eon(1) Turn-on switching energy - 270 - μJ td(off) Turn-off delay time - 71 - ns tf Current fall time - 41 - ns Eoff (2) Turn-off switching energy - 310 - µJ td(on) Turn-on delay time VCC = 400 V, IC = 30 A, VGE = 15 V, RG = 6.8 Ω, TJ = 175 °C (see Figure 27. Test circuit for inductive load switching) - 19 - ns tr Current rise time - 8.5 - ns Eon(1) Turn-on switching energy - 477 - μJ td(off) Turn-off delay time - 79 - ns tf Current fall time - 105 - ns Eoff (2) Turn-off switching energy - 643 - µJ 1. Including the reverse recovery of the diode. 2. Including the tail of the collector current. Table 6. Diode switching characteristics (inductive load) Symbol Parameter Test conditions Min. Typ. Max. Unit trr Reverse recovery time IF = 30 A, VR = 400 V, VGE = 15 V, di/dt = 1000 A/µs (see Figure 30. Diode reverse recovery waveform) - 115 - ns Qrr Reverse recovery charge - 600 - nC Irrm Reverse recovery current - 15 - A dIrr/dt Peak rate of fall of reverse recovery current during tb - 700 - A/µs Err Reverse recovery energy - 145 - µJ trr Reverse recovery time IF = 30 A, VR = 400 V, VGE = 15 V, di/dt = 1000 A/µs, TJ = 175 °C (see Figure 30. Diode reverse recovery waveform) - 221 - ns Qrr Reverse recovery charge - 2550 - nC Irrm Reverse recovery current - 26 - A dIrr/dt Peak rate of fall of reverse recovery current during tb - 192 - A/µs Err Reverse recovery energy - 720 - µJ STGB30H65DFB2 Electrical characteristics DS13253 - Rev 1 page 4/17 |
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