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DIM2400ESS12 Arkusz danych(PDF) 2 Page - Dynex Semiconductor

Numer części DIM2400ESS12
Szczegółowy opis  Single Switch IGBT Module
PDF  9 Pages
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Producent  DYNEX [Dynex Semiconductor]
Strona internetowa  http://www.dynexsemi.com
Logo DYNEX - Dynex Semiconductor

DIM2400ESS12 Arkusz danych(HTML) 2 Page - Dynex Semiconductor

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SEMICONDUCTOR
DIM2400ESS12-A000
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures
2/9
www.dynexsemi.com
ABSOLUTE MAXIMUM RATINGS
Stresses above those listed under ‘Absolute Maximum Ratings’ may cause permanent damage to the device. In
extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package.
Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect
device reliability.
Tcase = 25° C unless stated otherwise
Symbol
Parameter
Test Conditions
Max.
Units
VCES
Collector-emitter voltage
VGE = 0V
1200
V
VGES
Gate-emitter voltage
±20
V
IC
Continuous collector current
Tcase = 85° C
2400
A
IC(PK)
Peak collector current
1ms, Tcase =115° C
4800
A
Pmax
Max. transistor power dissipation
Tcase = 25° C, Tj = 150° C
20830
kW
I
2t
Diode I
2t value (IGBT arm)
VR = 0, tP = 10ms, Tvj = 125° C
900
kA
2S
Visol
Isolation voltage – per module
Commoned terminals to base plate. AC RMS, 1 min, 50Hz
2500
V



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