G3018 datasheet(1/4 Pages) GTM

Numer części	G3018

Szczegółowy opis	N-CHANNEL MOSFET

PDF	4 Pages

Scroll/Zoom	100%

Producent	GTM [GTM CORPORATION]

Strona internetowa	http://www.gtm.com.tw

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G3018

Page: 1/4

ISSUED DATE :2005/11/30

REVISED DATE :

G

G 33001188

N

N -- C

C H

H A

A N

N N

N E

E L

L M

M O

O S

S F

F E

E T

T

Description

N-channel enhancement-mode MOSFET

Features

&Low on-resistance.

&Fast switching speed.

&Low voltage drive (2.5V) makes this device ideal for portable equipment.

&Easily designed drive circuits.

&Easy to parallel.

Package Dimensions

Millimeter

REF.

Min.

Max.

REF.

Min.

Max.

A

2.70

3.10

G

1.90 REF.

B

2.40

2.80

H

1.00

1.30

C

1.40

1.60

K

0.10

0.20

D

0.35

0.50

J

0.40

-

E

0

0.10

L

0.85

1.15

F

0.45

0.55

M

0°

10°

Absolute Maximum Ratings

Parameter

Symbol

Ratings

Unit

Drain-Source Voltage

VDS

30

V

Gate-Source Voltage

VGS

f 20

V

Continuous Drain Current3

ID @TA=25 :

115

mA

Continuous Drain Current3

ID @TA=100 :

75

mA

Pulsed Drain Current1,2

IDM

800

mA

Power Dissipation

PD @TA=25 :

0.225

W

Linear Derating Factor

0.0018

W/

Operating Junction and Storage Temperature Range

Tj, Tstg

-40 ~ +150

Thermal Data

Parameter

Symbol

Ratings

Unit

Thermal Resistance Junction-ambient3 Max.

Rthj-a

556

/W

BVDSS

30V

RDS(ON)

8

ID

115mA

Pb Free Plating Product

Podobny numer części - G3018

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E-Tech Electronics LTD	G3018	348Kb / 4P	N - C H A N N E L M O S F E T
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G3018 Arkusz danych(PDF) 1 Page - GTM CORPORATION

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