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ISSUED DATE :2006/01/05

REVISED DATE :

Electrical Characteristics (Tj = 25 :::: unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Drain-Source Breakdown Voltage

25

-

-

V

Breakdown Voltage Temperature Coefficient

Tj

-

0.02

-

V/ :

Gate Threshold Voltage

1.0

-

3.0

V

Forward Transconductance

-

29

-

S

Gate-Source Leakage Current

-

-

±100

nA

Drain-Source Leakage Current(Tj=25 : )

-

-

1

uA

-

-

100

uA

-

-

5

-

-

7

m

-

28

45

Gate-Source Charge

-

5

-

Gate-Drain (“Miller”) Change

-

19

-

nC

-

10

-

Rise Time

-

80

-

Turn-off Delay Time

-

37

-

Fall Time

-

85

-

ns

Input Capacitance

-

2070

3310

Output Capacitance

-

990

-

Reverse Transfer Capacitance

-

300

-

pF

f=1.0MHz

Source-Drain Diode

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

-

-

1.3

V

-

50

-

ns

Reverse Recovery Charge

-

51

-

nC

dI/dt=100A/ s

Notes: 1. Pulse width limited by safe operating area.

2. Pulse width 300us, duty cycle 2%.