GP4501 datasheet(3/9 Pages) GTM

3 / 9 page

GP4501

Page: 3/9

ISSUED DATE :2006/12/06

REVISED DATE :

P-Channel Electrical Characteristics (Tj = 25 :::: unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Drain-Source Breakdown Voltage

BVDSS

-30

VGS=0, ID=-250uA

Breakdown Voltage Temperature Coefficient

BVDSS /

-0.028

V/ :

Reference to 25 , I

D=-1mA

Gate Threshold Voltage

VGS(th)

-1.0

-3.0

VDS=VGS, ID=-250uA

Forward Transconductance

gfs

8.5

VDS=-10V, ID=-5.3A

Gate-Source Leakage Current

IGSS

±100

VGS= ±16V

Drain-Source Leakage Current(Tj=25 )

-1

VDS=-30V, VGS=0

Drain-Source Leakage Current(Tj=70 )

IDSS

-25

VDS=-24V, VGS=0

VGS=-10V, ID=-5.3A

Static Drain-Source On-Resistance2

RDS(ON)

VGS=-4.5V, ID=-4.2A

Total Gate Charge2

Gate-Source Charge

Qgs

3.5

Gate-Drain (“Miller”) Change

Qgd

ID=-5.3A

VDS=-15V

VGS=-10V

Turn-on Delay Time2

Td(on)

Rise Time

Turn-off Delay Time

Td(off)

Fall Time

VDS=-15V

ID=-1A

VGS=-10V

RG=6

RD=15

Input Capacitance

Ciss

790

Output Capacitance

Coss

440

Reverse Transfer Capacitance

Crss

120

VGS=0V

VDS=-15V

f=1.0MHz

Source-Drain Diode

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Forward On Voltage2

VSD

-1.2

IS=-2.6A, VGS=0V, Tj=25 :

Continuous Source Current (Body Diode)

-1.67

VD=VG=0V, VS=-1.2V

Notes: 1. Pulse width limited by Max. junction temperature.

2. Pulse width 300us, duty cycle 2%.

3. Mounted on 1 in2 copper pad of FR4 board; 90 : /W when mounted on Min. copper pad.

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