GS3018 datasheet(1/4 Pages) GTM

Numer części	GS3018

Szczegółowy opis	N-CHANNEL MOSFET

PDF	4 Pages

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Producent	GTM [GTM CORPORATION]

Strona internetowa	http://www.gtm.com.tw

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1 / 4 page

GS3018

Page: 1/4

ISSUED DATE :2004/11/24

REVISED DATE :2005/12/02C

G

G S

S 33001188

N

N -- C

C H

H A

A N

N N

N E

E L

L M

M O

O S

S F

F E

E T

T

Description

N-channel enhancement-mode MOSFET

Features

&Low on-resistance.

&Fast switching speed.

&Low voltage drive (2.5V) makes this device ideal for portable equipment.

&Easily designed drive circuits.

&Easy to parallel.

Package Dimensions

Millimeter

REF.

Min.

Max.

REF.

Min.

Max.

A

0.8

1.10

L1

0.42 REF.

A1

0

0.10

L

0.15

0.35

A2

0.8

1.00

b

0.25

0.40

D

1.80

2.20

c

0.10

0.25

E

1.15

1.35

e

0.65 REF.

HE

1.80

2.40

Q1

0.15 BSC.

Absolute Maximum Ratings

Parameter

Symbol

Ratings

Unit

Drain-Source Voltage

VDS

30

V

Gate-Source Voltage

VGS

f 20

V

Continuous Drain Current3

ID @TA=25 :

115

mA

Continuous Drain Current3

ID @TA=100 :

75

mA

Pulsed Drain Current1,2

IDM

800

mA

Power Dissipation

PD @TA=25 :

0.225

W

Linear Derating Factor

0.0018

W/

Operating Junction and Storage Temperature Range

Tj, Tstg

-40 ~ +150

Thermal Data

Parameter

Symbol

Ratings

Unit

Thermal Resistance Junction-ambient3 Max.

Rthj-a

556

/W

BVDSS

30V

RDS(ON)

8

ID

115mA

Pb Free Plating Product

Podobny numer części - GS3018

Producent	Numer części	Arkusz danych	Szczegółowy opis
GTM CORPORATION	GS3018K	295Kb / 4P	N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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Podobny opis - GS3018

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Microsemi Corporation	APT6M100K	263Kb / 4P	N-Channel MOSFET
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KIA Semiconductor Techn...	2302	110Kb / 4P	P-CHANNEL MOSFET N-CHANNEL MOSFET

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GS3018 Arkusz danych(PDF) 1 Page - GTM CORPORATION

GS3018 Arkusz danych(HTML) 1 Page - GTM CORPORATION

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