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Zakładka z wyszukiwarką danych komponentów |
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Zakładka z wyszukiwarką danych komponentów |
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SPD09P06PLG Arkusz danych(PDF) 1 Page - BYCHIP ELECTRONICS CO., LIMITED |
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SPD09P06PLG Arkusz danych(HTML) 1 Page - BYCHIP ELECTRONICS CO., LIMITED |
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1 / 4 page  Absolute Maximum Ratings (TC=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS -60 V Gate-Source Voltage VGS ±20 V Drain Current-Continuous ID - 30 A Pulsed Drain Current IDM -64 A Maximum Power Dissipation PD 32 W Derating factor 0.21 W/℃ Single pulse avalanche energy (Note 5) AS E 65 mJ Operating Junction and Storage Temperature Range TJ,TSTG -55 To 175 ℃ Thermal Characteristic Thermal Resistance, Junction-to-Case (Note 2) RθJC 4.68 ℃ /W P-channel Enhancement Mode Power MOSFET Features VDS= -60V, ID= -30A RDS(ON) < 55mΩ @ VGS = -10V RDS(ON) < 65mΩ @ VGS = -4.5V ● Advanced Trench Technology ● Provide Excellent RDS(ON) and Low Gate Charge ● Lead Free and Green Available 100% UIS TESTED! 100% ΔVds TESTED! General Features www.bychip.cn Pin Assignment Schematic Diagram TO-252-2L Top View SPD09P06PLG v1.0 |
Podobny numer części - SPD09P06PLG |
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