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HA31005ANP Arkusz danych(PDF) 2 Page - Renesas Technology Corp |
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HA31005ANP Arkusz danych(HTML) 2 Page - Renesas Technology Corp |
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2 / 8 page ![]() HA31005ANP REJ03F0173-0200 Rev.2.00 Jul 31, 2007 Page 2 of 7 Electrical Characteristics (Ta = 25°C) Item Symbol Min. Typ Max. Unit Test Conditions Supply Voltage VCC 3 3.3 3.6 V Power Gain PG1 — 24 — dB Circuit Current Icc1 — 160 — mA f = 5.15 to 5.35 GHz Pout = +18 dBm, Icq = 130 mA Output Power Pout1 — +18 — dBm f = 5.15 GHz , EVM = 4%, 54 Mbps, 64 QAM_OFDM, Icq = 130 mA Power Gain PG2 — 30 — dB Circuit Current Icc2 — 110 — mA f = 2.484 GHz Pout = +18 dBm, Icq = 90 mA Output Power Pout2 — +18 — dBm f = 2.484 GHz, EVM = 4%, 54 Mbps, 64 QAM_OFDM, Icq = 90 mA Power Gain PG3 — 30 — dB Circuit Current Icc3 — 170 — mA Output Power Pout3 — +22 — dBm f = 2.484 GHz, .11 b 11 Mbps Vcc = 3.3 V, Icq = 90 mA Function Block Diagram GND RFout RFout GND RFin Vcc bias bias bias GND GND |
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