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ADL8106ACEZ-R7 Arkusz danych(PDF) 7 Page - Analog Devices

Numer części ADL8106ACEZ-R7
Szczegółowy opis  GaAs, pHEMT, Low Noise Amplifier, 18 GHz to 54 GHz
PDF  26 Pages
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Producent  AD [Analog Devices]
Strona internetowa  http://www.analog.com
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ADL8106ACEZ-R7 Arkusz danych(HTML) 7 Page - Analog Devices

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Data Sheet
ADL8106
PIN CONFIGURATION AND FUNCTION DESCRIPTIONS
analog.com
Rev. B | 7 of 26
Figure 2. Pin Configuration
Table 9. Pin Function Descriptions
Pin No.
Mnemonic
Description
1, 2, 3, 5, 6, 7, 9,
11, 12, 13, 14,
15, 17, 18, 19,
21, 22, 23, 24
GND
Ground. Connect to a ground plane that has low electrical and thermal impedance. See Figure 3 for the interface schematic.
4
RFIN
RF Input. The RFIN pin has a dc path to ground followed by an ac coupling capacitor in the RF signal path. If the dc bias level of the input
signal is not equal to 0 V, externally ac-couple the RFIN pin. See Figure 4 for the interface schematic.
8
VGG1
Negative Gate Bias Control. The gate voltage can be applied to VGG1. Adjust the negative voltage on the VGG1 pin to set the IDQ to the
desired level. See Figure 5 for the interface schematic.
10, 20
VDD1, VDD2
Drain Bias Pads with Integrated RF Chokes. Connect a common dc bias to the VDDx pads to provide drain current. See Figure 6 for the
interface schematic.
16
RFOUT
RF Output. The RFOUT pin has a resistive path to ground and an ac coupling capacitor in the RF signal path. If the dc bias level of the
next stage is not equal to 0 V, externally ac-couple the RFOUT pin. See Figure 6 for the interface schematic.
INTERFACE SCHEMATICS
Figure 3. GND Interface Schematic
Figure 4. RFIN Interface Schematic
Figure 5. VGG1 Interface Schematic
Figure 6. VDD1, VDD2, and RFOUT Interface Schematic



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