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Zakładka z wyszukiwarką danych komponentów |
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Zakładka z wyszukiwarką danych komponentów |
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IXFN44N100Q3 Arkusz danych(PDF) 1 Page - Inchange Semiconductor Company Limited |
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IXFN44N100Q3 Arkusz danych(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 3 page  ISFM1272 eq IXFN44N100Q3 N-Channel MOSFET Transistor www.iscsemi.com 1 FEATURES · Drain Current -ID= 38A@ TC=25℃ · Drain Source Voltage -VDSS= 1000V(Min) · Static Drain-Source On-Resistance -RDS(on) = 220mΩ(Max)@VGS= 10V APPLICATIONS · DC-DC Converters · Battery Chargers · DC Choppers · High Speed Power Switching Application Absolute Maximum Ratings(TC=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 1000 V VGS Gate-Source Voltage ± 30 V ID Drain Current-Continuous 38 A IDM Drain Current-Single Pulsed 110 A PD Total Dissipation @TC=25℃ 960 W TJ Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth(j-c) Thermal resistance junction to case 0.13 ℃ /W D G S S SOT-227 package |
Podobny numer części - IXFN44N100Q3 |
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Podobny opis - IXFN44N100Q3 |
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