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LX5501ASE Arkusz danych(PDF) 1 Page - Microsemi Corporation |
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LX5501ASE Arkusz danych(HTML) 1 Page - Microsemi Corporation |
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1 / 7 page ![]() LX5501A PRODUCTION DATA SHEET Microsemi Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 1 Copyright © 2004 Rev. 1.1, 2005-07-14 InGAP HBT Gain Block TM ® DESCRI PTI O N This general-purpose amplifier is a low cost, broadband RFIC manu- factured with an InGaP/GaAs Hetero- junction Bipolar Transistor (HBT) process (MOCVD). Designed as an easily cascadable 50- ohm internally matched gain block, the LX5501A can be used for IF and RF amplification in wireless / wired voice and data communication products as well as in broadband test equipment operating up to 6 GHz. The amplifier is available in a plastic 5-lead SOT-23 package. IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com KEY FEATUR ES Advanced InGaP HBT DC to 6 GHz Operation Single Supply Low Idle Current (10 - 35 mA) Small Signal Gain ~ 11 dB at 6 GHz P1dB ~ 11 dBm at 6 GHz SOT-23 Package APPLI C ATION S PA driver for WLAN and Cordless Phones. VCO buffer. Low Current, High Gain Cascaded Amplifiers. PRODUCT H I GHLIGHT • Fully characterized for 5v operation (with external bias resistor). • Input and output matched to 50 ohms for ease of cascading. • Cascaded gain blocks can be individually biased for the lowest supply current. C1 C2 L1 C3 C4 VCC OUT IN LX5501A 35 1 2 4 Rext PACKAGE ORDER I N FO SE Plastic SOT-23 5 pin TA(°C) RoHS Compliant / Pb-free Transition DC: 0503 -40 to +85°C LX5501ASE Note: Available in Tape & Reel. Append the letters “TR” to the part number. (i.e. LX5501ASE-TR) |
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