| Zakładka z wyszukiwarką danych komponentów |
|
P4C147 Arkusz danych(PDF) 5 Page - Pyramid Semiconductor Corporation |
|
|
|||||||||||||||||||||||||||||
P4C147 Arkusz danych(HTML) 5 Page - Pyramid Semiconductor Corporation |
|
5 / 10 page ![]() P4C147 Page 5 of 10 Document # SRAM103 REV A Input Pulse Levels GND to 3.0V Input Rise and Fall Times 3ns Input Timing Reference Level 1.5V Output Timing Reference Level 1.5V Output Load See Figures 1 and 2 Mode CE CE CE CE CE WE WE WE WE WE Output Power Standby H X High Z Standby Read L H D OUT Active Write L L High Z Active TRUTH TABLE AC TEST CONDITIONS Figure 1. Output Load Figure 2. Thevenin Equivalent * including scope and test fixture. Note: Due to the ultra-high speed of the P4C147, care must be taken when testing this device; an inadequate setup can cause a normal functioning part to be rejected as faulty. Long high-inductance leads that cause supply bounce must be avoided by bringing the V CC and ground planes directly up to the contactor fingers. A 0.01 µF high frequency capacitor is also required between V CC and ground. To avoid signal reflections, proper termination must be used; for example, a 50 Ω test environment should be terminated into a 50 Ω load with 1.73V (Thevenin Voltage) at the comparator input, and a 116 Ω resistor must be used in series with D OUT to match 166Ω (Thevenin Resistance). |
|
|
Link URL |
| Czy Alldatasheet okazała się pomocna? [ DONATE ] |
O Alldatasheet | Reklama | Kontakt | Polityka prywatności | Link do karty katalogowej | Linki | Lista producentów All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |