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P4C164L Arkusz danych(PDF) 6 Page - Pyramid Semiconductor Corporation

Numer części P4C164L
Szczegółowy opis  LOW POWER 8K x 8 STATIC CMOS RAM
PDF  11 Pages
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Producent  PYRAMID [Pyramid Semiconductor Corporation]
Strona internetowa  http://www.pyramidsemiconductor.com
Logo PYRAMID - Pyramid Semiconductor Corporation

P4C164L Arkusz danych(HTML) 6 Page - Pyramid Semiconductor Corporation

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P4C164L
Page 6 of 11
Document # SRAM116 REV B
3ns
TIMING WAVEFORM OF WRITE CYCLE NO.2 (
CE
CE
CE
CE
CE CONTROLLED)(6)
* including scope and test fixture.
Note:
Because of the high speed of the P4C164L, care must be taken when
testing this device; an inadequate setup can cause a normal
functioning part to be rejected as faulty. Long high-inductance leads
that cause supply bounce must be avoided by bringing the V
CC and
ground planes directly up to the contactor fingers. A 0.01 µF high
frequency capacitor is also required between V
CC
and ground.
To avoid signal reflections, proper termination must be used; for
example, a 50
Ω test environment should be terminated into a 50Ω load
with 1.77V (Thevenin Voltage) at the comparator input, and a 589
resistor must be used in series with D
OUT to match 639Ω (Thevenin
Resistance).
AC TEST CONDITIONS
Input Pulse Levels
Input Rise and Fall Times
Input Timing Reference Level
Output Timing Reference Level
Output Load
GND to 3.0V
1.5V
1.5V
See Figures 1 and 2
Mode
CE
CE
CE
CE
CE
1
CE
2
OE
OE
OE
OE
OE
WE
WE
WE
WE
WE
I/O
Power
Standby
H
X
X
X
High Z
Standby
Standby
X
L
X
X
High Z
Standby
D
OUT
Disabled
L
H
H
H
High Z
Active
Read
L
H
L
H
D
OUT
Active
Write
L
H
X
L
High Z
Active
TRUTH TABLE
Figure 1. Output Load
Figure 2. Thevenin Equivalent



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