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SAM9X75 Arkusz danych(PDF) 22 Page - Microchip Technology

Numer części SAM9X75
Szczegółowy opis  SAM9X75 System-in-Package (SiP) MPU with 1‑Gbit or 2‑Gbit DDR3L SDRAM
PDF  36 Pages
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Producent  MICROCHIP [Microchip Technology]
Strona internetowa  http://www.microchip.com
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SAM9X75 Arkusz danych(HTML) 22 Page - Microchip Technology

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SAM9X75 SiP
Electrical Characteristics
Data Sheet
© 2023 Microchip Technology Inc. and its subsidiaries
DS60001827B - 22
6.
Electrical Characteristics
Electrical characteristics, schematics, procedures and recommendations are the same as those given
in the SAM9X7 Series data sheet (see Reference Documents).
• The VDDQ and VDD power inputs described in the DDR3L SDRAM data sheets are connected
to the SAM9X75 SiP balls called “DDRM_VDD”. Therefore, the requirements placed on VDDQ
and VDD power inputs in the “Absolute Maximum Ratings” and “Recommended DC Operating
Conditions” sections of these data sheets apply to the DDRM_VDD power inputs.
• The VDDIN25 input powers the LVDS PLL of the device. It must be connected to VDDOUT25 on
the PCB. From an Absolute Maximum Ratings perspective, VDDIN25 has the same specification as
VDDLVDS.
6.1
Recommended Thermal Operating Conditions
Table 6-1. Recommended Thermal Operating Conditions
Symbol
Parameter
Min
Max
Unit
TA
Ambient temperature range
-40
85
°C
TJ_MPU
Junction temperature range
-40
125
°C
TJ_DDRx
-40
125
°C
Table 6-2. BGA243 Package Thermal Characteristics(1)(2)(3)
Symbol
Parameter
Typ
Unit
RJA
Junction-to-ambient thermal resistance
26
°C/W
Notes: 
1. RJA = (TJ_MPU - TA) / PTOT, where TA is the ambient temperature and PTOT is the power
consumption of both the processor and the embedded DDR memory. The DDR3L SDRAM
junction temperature is always lower than the MPU junction temperature.
2. According to the JEDEC JESD51-2 standard, with 2s2p board and 0 m/s air flow.
3. These values are not directly applicable to the board where the device is mounted. As per
JEDEC standards, these parameters do not characterize the package itself but rather the package
together with the PCB (four layers or more) and other environmental factors, such as still air. For
example, in still air JEDEC-defined RJA measurements, almost 70% of the power generated by the
chip is dissipated from the test board, not from the package surfaces.
6.2
Power Sequences
The DDR SDRAM power rail (DDRM_VDD) must be connected to VDDIOM on the PCB. Refer to the
section “Recommended Power Supply Sequencing” in the SAM9X7 Series data sheet (see Reference
Documents).
6.3
Device Power Consumption in Applicative Use Cases
Table 6-4 provides the processor power consumption in the following conditions:
• fCPU_CLK = 800 MHz
• fMCK = 266 MHz
• I & D caches are enabled.
• Use cases run on Linux
®.
• Current consumptions are measured as shown in Figure 6-1. Note that external component
current consumptions are not counted.
• Ambient temperature: 25°C
The measurements are provided for typical SAM9X75D1G and SAM9X75D2G devices.



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