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SAM9X75 Arkusz danych(PDF) 22 Page - Microchip Technology |
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SAM9X75 Arkusz danych(HTML) 22 Page - Microchip Technology |
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22 / 36 page ![]() SAM9X75 SiP Electrical Characteristics Data Sheet © 2023 Microchip Technology Inc. and its subsidiaries DS60001827B - 22 6. Electrical Characteristics Electrical characteristics, schematics, procedures and recommendations are the same as those given in the SAM9X7 Series data sheet (see Reference Documents). • The VDDQ and VDD power inputs described in the DDR3L SDRAM data sheets are connected to the SAM9X75 SiP balls called “DDRM_VDD”. Therefore, the requirements placed on VDDQ and VDD power inputs in the “Absolute Maximum Ratings” and “Recommended DC Operating Conditions” sections of these data sheets apply to the DDRM_VDD power inputs. • The VDDIN25 input powers the LVDS PLL of the device. It must be connected to VDDOUT25 on the PCB. From an Absolute Maximum Ratings perspective, VDDIN25 has the same specification as VDDLVDS. 6.1 Recommended Thermal Operating Conditions Table 6-1. Recommended Thermal Operating Conditions Symbol Parameter Min Max Unit TA Ambient temperature range -40 85 °C TJ_MPU Junction temperature range -40 125 °C TJ_DDRx -40 125 °C Table 6-2. BGA243 Package Thermal Characteristics(1)(2)(3) Symbol Parameter Typ Unit RJA Junction-to-ambient thermal resistance 26 °C/W Notes: 1. RJA = (TJ_MPU - TA) / PTOT, where TA is the ambient temperature and PTOT is the power consumption of both the processor and the embedded DDR memory. The DDR3L SDRAM junction temperature is always lower than the MPU junction temperature. 2. According to the JEDEC JESD51-2 standard, with 2s2p board and 0 m/s air flow. 3. These values are not directly applicable to the board where the device is mounted. As per JEDEC standards, these parameters do not characterize the package itself but rather the package together with the PCB (four layers or more) and other environmental factors, such as still air. For example, in still air JEDEC-defined RJA measurements, almost 70% of the power generated by the chip is dissipated from the test board, not from the package surfaces. 6.2 Power Sequences The DDR SDRAM power rail (DDRM_VDD) must be connected to VDDIOM on the PCB. Refer to the section “Recommended Power Supply Sequencing” in the SAM9X7 Series data sheet (see Reference Documents). 6.3 Device Power Consumption in Applicative Use Cases Table 6-4 provides the processor power consumption in the following conditions: • fCPU_CLK = 800 MHz • fMCK = 266 MHz • I & D caches are enabled. • Use cases run on Linux ®. • Current consumptions are measured as shown in Figure 6-1. Note that external component current consumptions are not counted. • Ambient temperature: 25°C The measurements are provided for typical SAM9X75D1G and SAM9X75D2G devices. |
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