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MBR30150CT Arkusz danych(PDF) 1 Page - Taiwan Semiconductor Company, Ltd

Numer części MBR30150CT
Szczegółowy opis  30.0 AMPS. Schottky Barrier Rectifiers
PDF  2 Pages
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Producent  TSC [Taiwan Semiconductor Company, Ltd]
Strona internetowa  http://www.taiwansemi.com
Logo TSC - Taiwan Semiconductor Company, Ltd

MBR30150CT Arkusz danych(HTML) 1 Page - Taiwan Semiconductor Company, Ltd

  MBR30150CT Datasheet HTML 1Page - Taiwan Semiconductor Company, Ltd MBR30150CT Datasheet HTML 2Page - Taiwan Semiconductor Company, Ltd  
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Dimensions in inches and (millimeters)
Version: A06
MBR3035CT - MBR30150CT
30.0 AMPS. Schottky Barrier Rectifiers
TO-220AB
Features
Plastic material used carries Underwriters Laboratory
Classifications 94V-0
Metal silicon junction, majority carrier conduction
Low power loss, high efficiency
High current capability, low forward voltage drop
High surge capability
For use in low voltage, high frequency inverters, free
wheeling, and polarity protection applications
Guardring for overvoltage protection
High temperature soldering guaranteed:
260
oC/10 seconds,0.25”(6.35mm)from case
Mechanical Data
Cases: JEDEC TO-220AB molded plastic
Terminals: Pure tin plated, lead free. solderable per
MIL-STD-750, Method 2026
Polarity: As marked
Mounting position: Any
Mounting torque: 5 in. - lbs. max
Weight: 0.08 ounce, 2.24 grams
Maximum Ratings and Electrical Characteristics
Rating at 25 oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Symbol MBR
3035
CT
MBR
3045
CT
MBR
3050
CT
MBR
3060
CT
MBR
3090
CT
MBR
30100
CT
MBR
30150
CT
Units
Maximum Recurrent Peak Reverse Voltage
VRRM
35
45
50
60
90
100
150
V
Maximum RMS Voltage
VRMS
24
31
35
42
63
70
105
V
Maximum DC Blocking Voltage
VDC
35
45
50
60
90
100
150
V
Maximum Average Forward Rectified Current at
TC=130
oC
I(AV)
30
A
Peak Repetitive Forward Current (Rated VR, Square
Wave, 20KHz) at Tc=130
oC
IFRM
30
A
Peak Forward Surge Current, 8.3 ms Single Half
Sine-wave Superimposed on Rated Load (JEDEC
method )
IFSM
200
A
Peak Repetitive Reverse Surge Current (Note 1)
IRRM
1.0
0.5
A
Maximum Instantaneous Forward Voltage at (Note 2)
IF=15A, Tc=25
oC
IF=15A, Tc=125
oC
IF=30A, Tc=25
oC
IF=30A, Tc=125
oC
VF
0.7
0.6
0.82
0.73
0.77
0.67
0.84
0.70
0.94
0.82
0.95
0.92
1.02
0.98
V
Maximum Instantaneous Reverse Current
@ Tc=25
oC at Rated DC Blocking Voltage Per Leg
@ Tc=125
oC (Note 2)
IR
0.2
15
0.2
10
0.2
7.5
0.1
5.0
mA
mA
Voltage Rate of Change, (Rated VR)
dV/dt
1,000
V/uS
Typical Junction Capacitance
Cj
600
460
320
pF
Maximum Thermal Resistance Per Leg (Note 3)
RθJC
1.0
1.5
oC/W
Operating Junction Temperature Range
TJ
-65 to +150
oC
Storage Temperature Range
T
STG
-65 to +175
oC
Notes:
1. 2.0us Pulse Width, f=1.0 KHz
2. Pulse Test: 300us Pulse Width, 1% Duty Cycle
3. Thermal Resistance from Junction to Case Per Leg, with Heatsink size (4”x6”x0.25”) Al-Plate


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