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MBRF1045 Arkusz danych(PDF) 1 Page - Taiwan Semiconductor Company, Ltd

Numer części MBRF1045
Szczegółowy opis  Isolation 10.0 AMPS. Schottky Barrier Rectifiers
PDF  2 Pages
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Producent  TSC [Taiwan Semiconductor Company, Ltd]
Strona internetowa  http://www.taiwansemi.com
Logo TSC - Taiwan Semiconductor Company, Ltd

MBRF1045 Arkusz danych(HTML) 1 Page - Taiwan Semiconductor Company, Ltd

  MBRF1045 Datasheet HTML 1Page - Taiwan Semiconductor Company, Ltd MBRF1045 Datasheet HTML 2Page - Taiwan Semiconductor Company, Ltd  
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- 130 -
.071(1.8)
MAX
.161(4.1)
.146(3.7)
.118(3.00)
.124(3.16)
.185(4.7)
.173(4.4)
.272(6.9)
.248(6.3)
.063(1.6)
MAX
.100(2.55)
.543(13.8)
.512(13.2)
.100(2.55)
.110(2.8)
.098(2.5)
.606(15.5)
.583(14.8)
.112(2.85)
.100(2.55)
.406(10.3)
.390(9.90)
.134(3.4)DIA
.113(3.0)DIA
2
MBRF1035 THRU MBRF10100
Isolation 10.0 AMPS. Schottky Barrier Rectifiers
Voltage Range
35 to 100 Volts
Current
10.0 Amperes
Features
Plastic material used carries Underwriters Laboratory
Classifications 94V-0
Metal silicon junction, majority carrier conduction
Low power loss, high efficiency
High current capability, low forward voltage drop
High surge capability
For use in low voltage, high frequency inverters, free
wheeling, and polarity protection applications
Guardring for overvoltage protection
High temperature soldering guaranteed:
260
oC/10 seconds,0.25”(6.35mm)from case
Mechanical Data
Cases: ITO-220AC molded plastic body
Terminals: Lead solderable per MIL-STD-750, Method
2026
Polarity: As marked
Mounting position: Any
Mounting torque: 5 in. - lbs. max
Weight: 0.08 ounce, 2.24 grams
ITO-220AC
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25
℃ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Symbol MBRF
1035
MBRF
1045
MBRF
1050
MBRF
1060
MBRF
1090
MBRF
10100
Units
Maximum Recurrent Peak Reverse Voltage
VRRM
35
45
50
60
90
100
V
Maximum RMS Voltage
VRMS
24
31
35
42
63
70
V
Maximum DC Blocking Voltage
VDC
35
45
50
60
90
100
V
Maximum Average Forward Rectified Current
See Fig. 1
I(AV)
10
A
Peak Repetitive Forward Current (Square Wave,
20KHz) at Tc=135
oC
IFRM
20.0
A
Peak Forward Surge Current, 8.3 ms Single Half
Sine-wave Superimposed on Rated Load (JEDEC
method )
IFSM
150
A
Peak Repetitive Reverse Surge Current (Note 1)
IRRM
1.0
0.5
A
Voltage Rate of Change (Rated VR)
dV/dt
10,000
V/uS
Maximum Instantaneous Forward Voltage at
(Note 2)
IF=10A, Tc=25
OC
IF=10A, Tc=125
OC
IF=20A, Tc=25
OC
IF=20A, Tc=125
OC
VF
-
0.57
0.84
0.72
0.80
0.70
0.95
0.85
0.85
0.71
-
-
V
Maximum Instantaneous Reverse Current
@ Tc =25
℃at Rated DC Blocking Voltage (Note 2)
@ Tc=125
IR
0.1
15.0
0.1
6.0
mA
mA
Typical Junction Capacitance
Cj
390
300
220
pF
Maximum Thermal Resistance, Junction to Case
(Note 3)
R
θJC
4.0
℃/W
Operating Junction Temperature Range
TJ
-65 to +150
Storage Temperature Range
T
STG
-65 to +175
Notes: 1. 2.0us Pulse Width, f=1.0 KHz
2. Pulse Test: 300us Pulse Width, 1% Duty Cycle
3. Mounted on Heatsink Size of 2 in x 3 in x 0.25 in Al-Plate.


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