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MBRF1035 Arkusz danych(PDF) 1 Page - Taiwan Semiconductor Company, Ltd

Numer części MBRF1035
Szczegółowy opis  Isolated 10.0 AMPS. Schottky Barrier Rectifiers
PDF  2 Pages
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Producent  TSC [Taiwan Semiconductor Company, Ltd]
Strona internetowa  http://www.taiwansemi.com
Logo TSC - Taiwan Semiconductor Company, Ltd

MBRF1035 Arkusz danych(HTML) 1 Page - Taiwan Semiconductor Company, Ltd

  MBRF1035 Datasheet HTML 1Page - Taiwan Semiconductor Company, Ltd MBRF1035 Datasheet HTML 2Page - Taiwan Semiconductor Company, Ltd  
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Dimensions in inches and (millimeters)
- 112 -
Version:B07
MBRF1035 - MBRF10150
Isolated 10.0 AMPS. Schottky Barrier Rectifiers
ITO-220AC
.071(1.8)
MAX
.161(4.1)
.146(3.7)
.118(3.00)
.124(3.16)
.185(4.7)
.173(4.4)
.272(6.9)
.248(6.3)
.063(1.6)
MAX
.100(2.55)
.543(13.8)
.512(13.2)
.100(2.55)
.110(2.8)
.098(2.5)
.606(15.5)
.583(14.8)
.112(2.85)
.100(2.55)
.406(10.3)
.390(9.90)
.134(3.4)DIA
.113(3.0)DIA
.043(1.1)
.020(0.5)
.035(0.9)
.055(1.4)
.030(0.76)
.020(0.50)
2
PIN 1
PIN 2
Case Positive
CASE
Features
Plastic material used carries Underwriters
Laboratory Classifications 94V-0
Metal silicon junction, majority carrier conduction
Low power loss, high efficiency
High current capability, low forward voltage drop
High surge capability
For use in low voltage, high frequency inverters,
free wheeling, and polarity protection applications
Guardring for overvoltage protection
High temperature soldering guaranteed:
260
oC/10 seconds,0.25”(6.35mm)from case
Mechanical Data
Cases: JEDEC TO-220AC molded plastic body
Terminals: Pure tin plated, lead free. solderable per
MIL-STD-750, Method 2026
Polarity: As marked
Mounting position: Any
Mounting torque: 5 in. - lbs. max
Weight: 0.08 ounce, 2.24 grams
Maximum Ratings and Electrical Characteristics
Rating at 25
oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Symbol MBRF
1035
MBRF
1045
MBRF
1050
MBRF
1060
MBRF
1090
MBRF
10100
MBRF
10150
Units
Maximum Recurrent Peak Reverse Voltage
VRRM
35
45
50
60
90
100
150
V
Maximum RMS Voltage
VRMS
24
31
35
42
63
70
105
V
Maximum DC Blocking Voltage
VDC
35
45
50
60
90
100
150
V
Maximum Average Forward Rectified Current
at Tc=125
oC
I(AV)
10
A
Peak Repetitive Forward Current (Rated VR,
Square Wave, 20KHz) at Tc=125
oC
IFRM
32
A
Peak Forward Surge Current, 8.3 ms Single Half
Sine-wave Superimposed on Rated Load (JEDEC
method )
IFSM
150
A
Peak Repetitive Reverse Surge Current (Note 1)
IRRM
1.0
0.5
A
Maximum Instantaneous Forward Voltage at:
(Note 2)
IF=10A, TC=25
oC
IF=10A, TC=125
oC
IF=20A, TC=25
oC
IF=20A, TC=125
oC
VF
0.70
0.57
0.84
0.72
0.80
0.70
0.95
0.85
0.85
0.71
1.05
V
0.1
Maximum Instantaneous Reverse Current
@ Tc =25
oC at Rated DC Blocking Voltage
@ Tc=125
oC
(Note 2)
IR
15
10
0.1
6.0
mA
mA
Voltage Rate of Change (Rated VR)
dV/dt
10,000
V/uS
Typical Junction Capacitance
Cj
500
pF
M
aximum Typical Thermal Resistance(Note 3)
RθJC
3.0
oC/W
Operating Junction Temperature Range
TJ
-65 to +150
oC
Storage Temperature Range
TSTG
-65 to +175
oC
Notes:
1. 2.0us Pulse Width, f=1.0 KHz
2. Pulse Test: 300us Pulse Width, 1% Duty Cycle
3. Thermal Resistance from Junction to Case Per Leg with Heatsink Size of 2 in x 3 in x 0.25 in Al-Plate.


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