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STM32F103C8T6 Arkusz danych(PDF) 28 Page - STMicroelectronics |
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STM32F103C8T6 Arkusz danych(HTML) 28 Page - STMicroelectronics |
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28 / 67 page ![]() Electrical characteristics STM32F103xx 28/67 5.3.3 Embedded reset and power control block characteristics The parameters given in Table 9 are derived from tests performed under ambient temperature and VDD supply voltage conditions summarized in Table 7. 5.3.4 Embedded reference voltage The parameters given in Table 10 are derived from tests performed under ambient temperature and VDD supply voltage conditions summarized in Table 7. Table 9. Embedded reset and power control block characteristics Symbol Parameter Conditions Min Typ Max Unit VPVD Programmable voltage detector level selection PLS[2:0]=000 (rising edge) 2.1 2.18 2.26 V PLS[2:0]=000 (falling edge) 2 2.08 2.16 V PLS[2:0]=001 (rising edge) 2.19 2.28 2.37 V PLS[2:0]=001 (falling edge) 2.09 2.18 2.27 V PLS[2:0]=010 (rising edge) 2.28 2.38 2.48 V PLS[2:0]=010 (falling edge) 2.18 2.28 2.38 V PLS[2:0]=011 (rising edge) 2.38 2.48 2.58 V PLS[2:0]=011 (falling edge) 2.28 2.38 2.48 V PLS[2:0]=100 (rising edge) 2.47 2.58 2.69 V PLS[2:0]=100 (falling edge) 2.37 2.48 2.59 V PLS[2:0]=101 (rising edge) 2.57 2.68 2.79 V PLS[2:0]=101 (falling edge) 2.47 2.58 2.69 V PLS[2:0]=110 (rising edge) 2.66 2.78 2.9 V PLS[2:0]=110 (falling edge) 2.56 2.68 2.8 V PLS[2:0]=111 (rising edge) 2.76 2.88 3 V PLS[2:0]=111 (falling edge) 2.66 2.78 2.9 V VPVDhyst PVD hysteresis 100 mV VPOR/PDR Power on/power down reset threshold Falling edge 1.8 1.88 1.96 V Rising edge 1.84 1.92 2.0 V VPDRhyst PDR hysteresis 40 mV TRSTTEMPO Reset temporization 1 2.5 4.5 mS Table 10. Embedded internal reference voltage Symbol Parameter Conditions Min Typ Max Unit VREFINT Internal reference voltage −45°C < T A < +105°C 1.16 1.20 1.26 V −45°C < T A < +85°C 1.16 1.20 1.24 V |
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