TSM7401CSRL datasheet(2/6 Pages) TSC

2 / 6 page

TSM7401

20V N-Channel MOSFET w/ESD Protected

2/6

Version: C07

Electrical Specifications (Ta = 25oC unless otherwise noted)

Parameter

Conditions

Symbol

Min

Typ

Max

Unit

Static

Drain-Source Breakdown Voltage

VGS = 0V, ID = 250uA

BVDSS

Gate Threshold Voltage

VDS = VGS, ID = 250uA

VGS(TH)

0.6

0.8

1.0

Gate Body Leakage

VGS = ±12V, VDS = 0V

IGSS

±10

Zero Gate Voltage Drain Current

VDS = 16V, VGS = 0V

IDSS

1.0

On-State Drain Current

VDS =5V, VGS = 4.5V

ID(ON)

VGS = 4.5V, ID = 4.5A

VGS = 2.5V, ID = 3.5A

Drain-Source On-State Resistance

VGS = 1.8V, ID = 2.0A

RDS(ON)

mΩ

Forward Transconductance

VDS = 10V, ID = 4.5A

gfs

Diode Forward Voltage

IS = 2A, VGS = 0V

VSD

0.6

1.2

Dynamic

Total Gate Charge

Gate-Source Charge

Qgs

3.4

Gate-Drain Charge

VDS = 10V, ID = 4.5A,

VGS = 4.5V

Qgd

1.2

Input Capacitance

Ciss

950

Output Capacitance

Coss

450

Reverse Transfer Capacitance

VDS = 10V, VGS = 0V,

f = 1.0MHz

Crss

135

Switching

Turn-On Delay Time

td(on)

140

200

Turn-On Rise Time

210

250

Turn-Off Delay Time

td(off)

3700

4800

Turn-Off Fall Time

VDD = 10V, RL = 10Ω,

ID = 1A, VGEN = 4.5V,

RG = 6Ω

2000

2600

Notes:

a. pulse test: PW ≤300µS, duty cycle ≤2%

b. For DESIGN AID ONLY, not subject to production testing.

b. Switching time is essentially independent of operating temperature.

TSM7401CSRL Arkusz danych(PDF) 2 Page - Taiwan Semiconductor Company, Ltd

TSM7401CSRL Arkusz danych(HTML) 2 Page - Taiwan Semiconductor Company, Ltd

Html Pages

1 2 3 4 5 6

Arkusz danych Pobierz

Link URL