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TCS1200

1200 Watts, 53 Volts

Pulsed Avionics at 1030 MHz

PRELIMINARY SPECIFICATION

GENERAL DESCRIPTION

The TCS1200 is a high power COMMON BASE bipolar transistor. It is

designed for pulsed systems at 1030 MHz, with the pulse width and duty

required for TCAS applications. The device has gold thin-film metalization and

emitter ballasting for proven highest MTTF. The transistor includes input and

output prematch for broadband capability. Low thermal resistance package

reduces junction temperature, extends life.

CASE OUTLINE

55TU-1

ABSOLUTE MAXIMUM RATINGS

Maximum Power Dissipation

Device Dissipation @ 25

°C

1

2095 W

Maximum Voltage and Current

65 V

3.5 V

60 A

Maximum Temperatures

Storage Temperature

-65 to +200

°C

Operating Junction Temperature

+200

°C

ELECTRICAL CHARACTERISTICS @ 25

°°°°C

SYMBOL

CHARACTERISTICS

TEST CONDITIONS

MIN

TYP

MAX

UNITS

Power Out

Pulse Width = 32

µs

1200

W

Power Gain

Duty Factor = 2%

10.2

dB

Collector Efficiency

45

%

Return Loss

-10

dB

Tr

Rise Time

100

ns

Pd

Pulse Droop

0.7

dB

VSWR

Pin = 115 Watts

3.0:1

FUNCTIONAL CHARACTERISTICS @ 25

°°°°C

Emitter to Base Breakdown

Ie = 40 mA

3.5

V

Collector to Emitter Breakdown Ic = 100 mA

65

V

DC – Current Gain

Vce = 5V, Ic = 5A

20

θjc

1

Thermal Resistance

0.02

°C/W

NOTES: 1. At rated output power and pulse conditions

Preliminary – May 2007