TA=25

°C,Vdd=3.0V,Idd=65mA,Zin=Zo=50Ω

Sym

Parameters/Condition

Unit

Max

Vd

DraintoGroundVoltage

V

5.5

Id

DrainCurrent

mA

100

Pin

RFCWInputPowerMax

dBm

10

Tch

Maxchanneltemperature

C

+150

Tstg

Storagetemperature

C

-65+150

Tmax MaximumAssemblyTemp

C

260for20s

Sym

Parameter and Test

Condition

Unit

Min Typ

Max

Idd

DrainSupplyCur-

rentunderanyRF

powerdriveandtemp.

mA

40

65

90

Vd

DrainSupplyVoltage

V

3

5

qjc

C/W

27

Symbol

Parameters and Test Conditions

Freq

Units

Min.

Typ.

Max.

Freq

OperationalFrequency

GHz

18

32

Gain

RFSmallSignalGain

18GHz

dB

19

23.2

26GHz

dB

20.8

24.4

29GHz

dB

20

23.6

NF

NoiseFigureinto50

Ω

18GHz

dB

2.6

3.6

26GHz

dB

2.2

3.2

29GHz

dB

2.6

3.5

Rlin

InputReturnLoss

dB

-10

Rlout

OutputReturnLoss

dB

-13

Iso

Isolation

dB

-45

P1dB

OutputPowerat1dBgaincompression

dBm

8

OIP3

OutputThirdOrderInterceptPoint

dBm

18

Notes:

4. Small/Large-signaldatameasuredinafullyde-embeddedtestfixtureformTA=25°C.

5. Specificationsarederivedfrommeasurementsina50

Ωtestenvironment.Aspectsoftheamplifierperformancemaybeimprovedoveranar-

rowerbandwidthbyapplicationofadditionalconjugate,linearity,orlownoise(Gopt)matching.

6. Alltestedparametersguaranteedwithmeasurementaccuracy+/-0.5dBforNFand+/-1dBforgainat18GHz,26GHzand+/-1.5dBforgainat

29GHz.

Notes:

2. AmbientoperationaltemperatureTA=25

°Cunlessnoted

3. Channel-to-backsideThermalResistance(Tchannel=34

°C)asmea-

suredusinginfraredmicroscopy.ThermalResistanceatbackside

temp.(Tb)=25

°Ccalculatedfrommeasureddata.

Notes:

1. Operationinexcessofanyoftheseconditionsmayresultinper-

manentdamagetothisdevice.Theabsolutemaximumratingsfor

Vd,IdandPinweredeterminedatanambienttemperatureof25°C

unlessnotedotherwise.