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Zakładka z wyszukiwarką danych komponentów |
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Zakładka z wyszukiwarką danych komponentów |
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IXTH1N200P3 Arkusz danych(PDF) 1 Page - Inchange Semiconductor Company Limited |
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IXTH1N200P3 Arkusz danych(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  ISF1285 eq IXTH1N200P3 N-Channel MOSFET Transistor www.iscsemi.com 1 FEATURES · Drain Current -ID= 1.0A@ TC=25℃ · Drain Source Voltage -VDSS= 2000V(Min) · Static Drain-Source On-Resistance -RDS(on) = 40Ω(Max)@VGS= 10V APPLICATIONS · High Voltage Power Supplies · Capacitor Discharge · Pulse Circuits Absolute Maximum Ratings(TC=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 200 V VGSS Gate-Source Opetation Voltage ± 20 V ID Drain Current-Continuous@Tc=25℃ 1.0 A IDM Drain Current-Single Pluse 3.0 A PD Total Dissipation @TC=25℃ 125 W TJ Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 1.0 ℃ /W file:///C:/Users/Administrator/Docu ments/WeChat Files/wxid_tz5gn4uyhzq221/FileStor age/Temp/1718069263025.jpg |
Podobny numer części - IXTH1N200P3 |
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Podobny opis - IXTH1N200P3 |
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