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LS4448 Arkusz danych(PDF) 1 Page - Diotec Semiconductor |
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LS4448 Arkusz danych(HTML) 1 Page - Diotec Semiconductor |
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1 / 2 page ![]() LS4148, LS4448 LS4148, LS4448 Surface Mount Small Signal Diodes Kleinsignal-Dioden für die Oberflächenmontage Version 2006-10-30 Dimensions - Maße [mm] Power dissipation Verlustleistung 500 mW Repetitive peak reverse voltage Periodische Spitzensperrspannung 100 V Glass case Quadro-MiniMELF Glasgehäuse Quadro-MiniMELF ~ SOD-80 Weight approx. Gewicht ca. 0.04 g Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle Maximum ratings (TA = 25°C) Grenzwerte (TA = 25°C) LS4148, LS4448 Power dissipation − Verlustleistung Ptot 500 mW 1) Max. average forward current – Dauergrenzstrom (dc) IFAV 150 mA 1) Repetitive peak forward current – Periodischer Spitzenstrom IFRM 300 mA 1) Non repetitive peak forward surge current Stoßstrom-Grenzwert tp ≤ 1 s tp ≤ 1 µs IFSM IFSM 500 mA 1) 2 A Reverse voltage – Sperrspannung VR 75 V Repetitive peak reverse voltage – Periodische Spitzensperrspannung VRRM 100 V Junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur Tj TS -55...+175°C -55…+175°C Characteristics (Tj = 25°C) Kennwerte (Tj = 25°C) Forward voltage Durchlass-Spannung LS4148 IF = 50 mA VF < 1.0 V LS4448 IF = 5 mA IF = 100 mA VF VF 0.62...0.72 V < 1 V Leakage current – Sperrstrom 2)VR = 20 V VR = 75 V IR IR < 25 nA < 5 µA Leakage current – Sperrstrom, Tj = 125°C 2)VR = 20 V VR = 75 V IR IR < 30 µA < 50 µA Max. junction capacitance – Max. Sperrschichtkapazität VR = 0 V, f = 1 MHz CT 4 pF Reverse recovery time – Sperrverzug IF = 10 mA über/through IR = 10 mA bis/to IR = 1 mA trr < 4 ns 1 Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss 2 Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2% © Diotec Semiconductor AG http://www.diotec.com/ 1 |
Podobny numer części - LS4448 |
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Podobny opis - LS4448 |
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