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LS4448 Arkusz danych(PDF) 1 Page - Diotec Semiconductor

Numer części LS4448
Szczegółowy opis  Surface Mount Small Signal Diodes
PDF  2 Pages
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Producent  DIOTEC [Diotec Semiconductor]
Strona internetowa  http://www.diotec.com
Logo DIOTEC - Diotec Semiconductor

LS4448 Arkusz danych(HTML) 1 Page - Diotec Semiconductor

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LS4148, LS4448
LS4148, LS4448
Surface Mount Small Signal Diodes
Kleinsignal-Dioden für die Oberflächenmontage
Version 2006-10-30
Dimensions - Maße [mm]
Power dissipation
Verlustleistung
500 mW
Repetitive peak reverse voltage
Periodische Spitzensperrspannung
100 V
Glass case Quadro-MiniMELF
Glasgehäuse Quadro-MiniMELF
~ SOD-80
Weight approx.
Gewicht ca.
0.04 g
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
Maximum ratings (TA = 25°C)
Grenzwerte (TA = 25°C)
LS4148, LS4448
Power dissipation − Verlustleistung
Ptot
500 mW 1)
Max. average forward current – Dauergrenzstrom (dc)
IFAV
150 mA 1)
Repetitive peak forward current – Periodischer Spitzenstrom
IFRM
300 mA 1)
Non repetitive peak forward surge current
Stoßstrom-Grenzwert
tp ≤ 1 s
tp ≤ 1 µs
IFSM
IFSM
500 mA 1)
2 A
Reverse voltage – Sperrspannung
VR
75 V
Repetitive peak reverse voltage – Periodische Spitzensperrspannung
VRRM
100 V
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
Tj
TS
-55...+175°C
-55…+175°C
Characteristics (Tj = 25°C)
Kennwerte (Tj = 25°C)
Forward voltage
Durchlass-Spannung
LS4148
IF = 50 mA
VF
< 1.0 V
LS4448
IF = 5 mA
IF = 100 mA
VF
VF
0.62...0.72 V
< 1 V
Leakage current – Sperrstrom 2)VR = 20 V
VR = 75 V
IR
IR
< 25 nA
< 5 µA
Leakage current – Sperrstrom, Tj = 125°C 2)VR = 20 V
VR = 75 V
IR
IR
< 30 µA
< 50 µA
Max. junction capacitance – Max. Sperrschichtkapazität
VR = 0 V, f = 1 MHz
CT
4 pF
Reverse recovery time – Sperrverzug
IF = 10 mA über/through IR = 10 mA bis/to IR = 1 mA
trr
< 4 ns
1
Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss
2
Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%
© Diotec Semiconductor AG
http://www.diotec.com/
1


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