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Zakładka z wyszukiwarką danych komponentów |
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Zakładka z wyszukiwarką danych komponentów |
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AT704 Arkusz danych(PDF) 1 Page - Power Semiconductors |
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AT704 Arkusz danych(HTML) 1 Page - Power Semiconductors |
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1 / 4 page  PHASE CONTROL THYRISTOR AT704 Repetitive voltage up to 1600 V Mean on-state current 640 A Surge current 8 kA FINAL SPECIFICATION Feb 97 - ISSUE : 04 Symbol Characteristic Conditions Tj [°C] Value Unit BLOCKING V RRM Repetitive peak reverse voltage 125 1600 V V RSM Non-repetitive peak reverse voltage 125 1700 V V DRM Repetitive peak off-state voltage 125 1600 V I RRM Repetitive peak reverse current V=VRRM 125 50 mA I DRM Repetitive peak off-state current V=VDRM 125 50 mA CONDUCTING I T (AV) Mean on-state current 180° sin, 50 Hz, Th=55°C, double side cooled 640 A I T (AV) Mean on-state current 180° sin, 50 Hz, Tc=85°C, double side cooled 515 A I TSM Surge on-state current sine wave, 10 ms 125 8 kA I² t I² t without reverse voltage 320 x1E3 A²s V T On-state voltage On-state current = 1000 A 25 1.58 V V T(TO) Threshold voltage 125 0.86 V r T On-state slope resistance 125 0.790 mohm SWITCHING di/dt Critical rate of rise of on-state current, min. From 75% VDRM up to 720 A, gate 10V 5ohm 125 200 A/µs dv/dt Critical rate of rise of off-state voltage, min. Linear ramp up to 70% of VDRM 125 500 V/µs td Gate controlled delay time, typical VD=100V, gate source 10V, 10 ohm , tr=.5 µs 25 1.3 µs tq Circuit commutated turn-off time, typical dV/dt = 20 V/µs linear up to 75% VDRM 250 µs Q rr Reverse recovery charge di/dt=-20 A/µs, I= 470 A 125 µC I rr Peak reverse recovery current VR= 50 V A I H Holding current, typical VD=5V, gate open circuit 25 300 mA I L Latching current, typical VD=5V, tp=30µs 25 700 mA GATE V GT Gate trigger voltage VD=5V 25 3.5 V I GT Gate trigger current VD=5V 25 200 mA V GD Non-trigger gate voltage, min. VD=VDRM 125 0.25 V V FGM Peak gate voltage (forward) 30 V I FGM Peak gate current 10 A V RGM Peak gate voltage (reverse) 5 V P GM Peak gate power dissipation Pulse width 100 µs 150 W P G Average gate power dissipation 2 W MOUNTING R th(j-h) Thermal impedance, DC Junction to heatsink, double side cooled 52 °C/kW R th(c-h) Thermal impedance Case to heatsink, double side cooled 10 °C/kW T j Operating junction temperature -30 / 125 °C F Mounting force 8.4 / 9.4 kN Mass 280 g ORDERING INFORMATION : AT704 S 16 standard specification VDRM&VRRM/100 Via N. Lorenzi 8 - I 16152 GENOVA - ITALY Tel. int. +39/(0)10 6556549 - (0)10 6556488 Fax Int. +39/(0)10 6442510 Tx 270318 ANSUSE I - ANSALDO Ansaldo Trasporti s.p.a. Unita' Semiconduttori |
Podobny numer części - AT704 |
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Podobny opis - AT704 |
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