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M58PR512LE Arkusz danych(PDF) 66 Page - STMicroelectronics

Numer części M58PR512LE
Szczegółowy opis  256-Mbit, 512-Mbit or 1-Gbit (횞 16, multiple bank, multilevel, burst) 1.8 V supply Flash memories
PDF  119 Pages
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Producent  STMICROELECTRONICS [STMicroelectronics]
Strona internetowa  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

M58PR512LE Arkusz danych(HTML) 66 Page - STMicroelectronics

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Program and erase times and endurance cycles
M58PR256LE, M58PR512LE, M58PR001LE
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Program and erase times and endurance cycles
The program and erase times and the number of program/ erase cycles per block are shown
in Table 23. Exact erase times may change depending on the memory array condition. The
best scenario is when all the bits in the block are at ‘0’ (pre-programmed). The worst
scenario is when all the bits in the block are at ‘1’ (not preprogrammed). Usually, the system
overhead is negligible with respect to the Erase time. In the M58PRxxxLE the maximum
number of program/erase cycles depends on the VPP voltage supply used.
Table 23.
Program/erase times and endurance cycles(1) (2)
Parameter
Condition
Min
Typ
Typical after
100 kW/E
cycles
Max
Unit
Erase
EFA block (4 KWord)
0.7
2.5
s
Main array block 128 KWord)
0.9
4
s
Program(3)
Single cell(4)
Word Program(5)
50
230
µs
Buffer Program
250
500
µs
Single word(4)
Word Program(5)
50
230
µs
Buffer Program
250
500
µs
Buffer (512 words) (Buffer
Program)
2.15
4.3
ms
EFA block (4 KWord)
0.2
0.94
s
Main array block (128 KWord)
(Buffer Program)
0.55
1.1
s
Suspend Latency
Program
20
30
µs
Erase
20
30
µs
Program/Erase
cycles (per block)
Main array block
100 000
cycles
EFA block
100 000
Blank Check
Main array block
3.2
ms



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