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CD4013B Arkusz danych(PDF) 3 Page - Silicon Supplies

Numer części CD4013B
Szczegółowy opis  CMOS High Voltage Logic
PDF  6 Pages
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Producent  SS [Silicon Supplies]
Strona internetowa  https://siliconsupplies.com/
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CD4013B Arkusz danych(HTML) 3 Page - Silicon Supplies

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CMOS High Voltage Logic – CD4013B
Rev 1.0
21/11/17
PARAMETER
SYMBOL
MIN
MAX
UNITS
Supply Voltage
VDD
3.0
18
V
DC Input Voltage, Output Voltage
VIN, VOUT
0
VDD
V
Operating Temperature Range
TJ
-55
+125
°C
Recommended Operating Conditions3 (Voltages referenced to V
SS)
Absolute Maximum Ratings1
PARAMETER
SYMBOL
VALUE
UNIT
DC Supply Voltage (Referenced to VSS)
VDD
-0.5 to +20
V
DC Input or Output Voltage (Referenced to VSS)
VIN, VOUT
-0.5 to VDD+0.5
V
Storage Temperature Range
TSTG
-65 to 150
°C
Input Current or Output Current (per Pad)
IIN, IOUT
±10
mA
TJ = -55°C to 100°C
500
Power Dissipation in
Still Air
2
TJ = 100°C to 125°C
PD
200
mW
DC Electrical Characteristics (Voltages referenced to V
SS)
LIMITS
PARAMETER
SYMBOL
VDD
CONDITIONS
25°C
85°C
FULL RANGE
4
UNITS
5V
VOUT =0.5V
or VDD= -0.5V
3.5
3.5
3.5
10V
VOUT =1.0V
or VDD =-1.0V
7
7
7
Minimum High-Level
Input Voltage
VIH
15V
VOUT =1.5V
or VDD = -1.5V
11
11
11
V
5V
VOUT =0.5V
or VDD= -0.5V
1.5
1.5
1.5
10V
VOUT =1.0V
or VDD =-1.0V
3
3
3
Maximum Low-Level
Input Voltage
VIL
15V
VOUT =1.5V
or VDD = 1.5V
4
4
4
V
5V
4.95
4.95
4.95
10V
9.95
9.95
9.95
Minimum High-Level
Output Voltage
VOH
15V
VIN = VSS or VDD
14.95
14.95
14.95
V
3.  This device contains protection circuitry against damage due to high static voltages or electric fields. However, precautions must be taken to avoid
applications of voltage higher than max rated voltages to this high-impedance circuit. For proper operation, VIN and VOUT should be constrained to range
VSS ≤ (VIN or VOUT) ≤ VDD. Unused inputs must be tied to an appropriate logic voltage level (e.g. VSS or VDD). Unused outputs must be left open.
1.  Operation above the absolute maximum rating may cause device failure. Operation at the absolute maximum ratings, for extended periods, may
reduce device reliability. 2. Measured in plastic DIP package, results in die form are dependent on die attach and assembly method.
4.  −55˚C ≤ TJ ≤ +125˚C



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